OM55N10SA

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate change simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N10SC OM55N10SC OM55N10SA OM75N06SC OM75N06SA OM75N05SC OM75N05SA VDS (V) 100 100 100 60 60 50 50 RDS(on) ( ) .025 .030 .035 .016 .018 .016 .018 ID (A) 60 55 55 75 75 75 75 Package TO-258AA TO-258AA TO-254AA TO-258AA TO-254AA TO-258AA TO-254AA 3.1 SCHEMATIC Drain PIN CONNECTION TO-254AA TO-258AA Gate Source 1 Pin 1: Pin 2: Pin 3: 23 Drain Source Gate 1 Pin 1: Pin 2: Pin 3: 2 3 Drain Source Gate 4 11 R1 Supersedes 2 07 R0 3.1 - 47 OM55N10SA - OM75N06SC ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction-To-Case TJ Tstg Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Continuous Drain Current2 Current2 60N10SC 100 100 60 37 180 130 55 1.00 -55 to 150 Storage Temperature Range 300 300 300 300 °C 55N10SA 55N10SC 100 100 55 33 180 125 50 1.00 -55 to 150 75N06SA 75N06SC 60 60 75 45 225 125 50 1.00 75N05SA 75N05SC 50 50 75 45 225 125 50 1.00 Units V V A A A W W W/°C °C Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating and -55 to 150 -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C THERMAL RESISTANCE RthJC Junction-to-Case 1.0 °C/W PACKAGE LIMITATIONS Parameters ID Continuous Drain Current Linear Derating Factor, Junction-to-Ambient RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation) TO254AA 25 .020 50 TO-258AA 35 .025 40 Unit A W/°C °C/W MECHANICAL OUTLINE 3.1 .165 .155 .695 .685 .270 .240 .045 .035 .685 .665 .800 .790 .144 DIA. .545 .535 .050 .040 .835 .815 .707 .697 .550 .530 .550 .530 .092 MAX. .750 .500 .065 .055 .140 TYP. .005 .045 .035 .150 TYP. .260 .249 .550 .510 .005 .200 TYP. .150 TYP. TO-258AA PACKAGE OPTIONS TO-254AA MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 3.1 - 48 OM60N10SC (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 60 A (repetitive or non-repetitive,TJ = 25°C) 720 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d < 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V OM55N10SC (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 55 A (repetitive or non-repetitive,TJ = 25°C) 600 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d < 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.025 0.05 V 60 25 4000 1100 250 90 270 270 120 200 210 410 60 240 1.6 180 1.8 10 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.03 0.06 V 55 25 4000 1100 250 90 270 270 120 200 210 410 55 220 1.5 180 1.8 11 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 3.1 - 49 ISD = 60 A, VGS = 0 ISD = 60 A, di/dt = 100 A/µs VR = 80 V Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V OM55N10SA - OM75N06SC ISD = 55 A, VGS = 0 ISD = 55 A, di/dt = 100 A/µs VR = 80 V *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. 3.1 3.1 OM55N10SA - OM75N06SC OM55N10SA (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 55 A (repetitive or non-repetitive,TJ = 25°C) 600 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d < 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V OM75N06SC (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d < 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 60 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.035 0.070 V 55 25 4000 1100 250 90 270 270 120 200 210 410 55 180 1.5 180 1.8 11 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.016 0.032 V 75 25 4100 1800 420 190 900 150 130 360 280 600 75 300 1.5 120 0.45 6.5 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 3.1 - 50 ISD = 55 A, VGS = 0 ISD = 55 A, di/dt = 100 A/µs VR = 80 V Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 25 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 25 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 25 V, ID = 40 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 40 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 25 V *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. OM75N06SA (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d < 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 60 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V OM75N05SC (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d < 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 50 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.018 0.036 V 75 25 4100 1800 420 190 900 150 130 360 280 600 75 300 1.5 120 0.45 6.5 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 25 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 25 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 25 V, ID = 40 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 40 V, ID = 75 A RG = 50 , VGS = 10 V Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 2 4 0.016 0.032 V 75 25 4100 1800 420 190 900 150 130 360 280 600 75 300 1.5 120 0.45 6.5 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 3.1 - 51 ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 25 V Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 20 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 20 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 20 V, ID = 40 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 35 V, ID = 75 A RG = 50 , VGS = 10 V OM55N10SA - OM75N06SC ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 20 V *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. 3.1 3.1 OM55N10SA - OM75N06SC OM75N05SA (TC = 25°C unless otherwise specified) Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d < 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 50 250 1000 ±100 V µA µA nA ID = 250 µA, VGS = 0 VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V Avalanche Characteristics Avalanche Current IAR EAS EAR IAR Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche Current SWITCHING TIMES TEST CIRCUITS FOR RESISTIVE LOAD RL VDS VD RS D.U.T. 2200 µF 3.3 µF Electrical Charactreristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Charactreristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Charactreristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Charactreristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope VDD FW 2 4 0.018 0.036 V 75 25 4100 1800 420 190 900 150 130 360 280 600 75 300 1.5 120 0.45 6.5 A S pF pF pF VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 3.1 - 52 TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING AND DIODE REVERSE RECOVERY TIME Total Gate Charge Qg Electrical Charactreristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Charactreristics - Source Drain Diode Source Drain Current ISD ISDM(*) Source Drain Current (pulsed) Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Current nS VDD = 20 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 20 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 20 V, ID = 40 A, VGS = 10 V nS nS nS A A V nS µC A VDD = 35 V, ID = 75 A RG = 50 , VGS = 10 V A D G S 25 MOS Diode B – A FAST Diode A L = 100µH B 3.3 µF D.U.T. S 85 1000 µF B D G VDS + ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 20 V – RC *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. OM55N10SA - OM75N06SC OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance gfs(S) 50 TJ = 40°C 0.030 TJ = 25°C 40 TJ = 125°C 30 0.020 20 VDS > ID(on) x RDS(on)max 0.015 10 0.025 VGS = 10V Static Drain-Source On Resistance RDS(on) 0 0 20 40 60 80 100 ID(A) 0.010 0 20 40 60 80 ID(A) Gate Charge vs Gate-Source Voltage VGS (V) C(nF) Capacitance Variations 10 5 8 4 Cies 6 VDS = 80V ID = 30A 2 3 VDS = 0 f = 1MHz 4 2 1 Coes Cres 0 20 40 60 80 100 VDS(V 0 0 20 40 60 80 100 Qg(nC) 0 3.1 Normalized Gate Threshold Voltage vs Temperature VGS(th) (norm) VDS = VGS ID = 250µA 1.5 1.2 RDS(on) (norm) Normalized On Resistance vs Temperature 1.0 1.0 0.8 0.5 VDS = 10V 0.6 0 ID = 30A -50 0 50 100 TJ (°C) -50 0 50 100 TJ (°C) 3.1 - 53 OM55N10SA - OM75N06SC OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance gfs(S) VDS > ID(on) x RDS(on)max 80 TJ = -40°C 60 TJ = 25°C 40 TJ = 125°C 10 12 VGS = 10V 14 Static Drain-Source On Resistance RDS(on) 20 8 0 0 20 40 60 80 ID(A) 6 0 20 40 60 80 ID(A) Gate Charge vs Gate-Source Voltage VGS(V) C(nF) Capacitance Variations 12 VDS = 25V ID = 40A 8 VDS = 0 f = 1MHz 6 8 4 Cies 4 2 Coes Cres 0 0 0 40 80 120 Qg(nC) 0 10 20 30 40 VDS(V) 3.1 Normalized Gate Threshold Voltage vs Temperature VGS(th) (norm) VDS = VGS ID = 250µA RDS(on) (norm) Normalized On Resistance vs Temperature 1.2 1.5 1.0 1.0 0.8 0.5 0.6 VGS = 10V ID = 40A 0.4 0 -50 0 50 100 TJ(°C) -50 0 50 100 TJ (°C) 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246