OMR117AHVNM

OMR117AHVNM

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    ETC

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  • 描述:

    OMR117AHVNM - 100 kRAD RADIATION TOLERANT 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR - List of Un...

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  • 数据手册
  • 价格&库存
OMR117AHVNM 数据手册
OMR117 4/4/2000 11:46 AM Page 1 OMR117AHVSR OMR117AHVST OMR117AHVNM OMR117AHVNH 100 kRAD RADIATION TOLERANT 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR 100K Rad Tolerant Three Terminal, Precision Adjustable Positive Voltage Regulator In Hermetic Packages Please see mechanical outlines herein FEATURES • • • • • • • • Electrically Similar To Industry Standard LM117AHV Adjustable Output Voltage Built In Thermal Overload Protection Short Circuit Current Limiting Available In Four Hermetic Package Styles Maximum Output Voltage Tolerance Is Guaranteed to + 1% Radiation Tolerant up to 150 K Rad (Si) Available Hi-Rel Screened, Class B and Class S, MIL-STD-883 DESCRIPTION These three terminal positive regulators are supplied in high density hermetically sealed packages and available Hi-Rel screened. All protective features are designed into the circuit, including thermal shutdown, current-limiting, and safe-area control. With heat sinking, these devices can deliver up to 1.5 amps of output current. These units also feature output voltages that can be fixed from 1.2 volts to 57 volts using external resistors. These devices are ideally suited for Space applications where small size, high reliability, and radiation tolerance is required. The high level of Radiation Tolerance of these devices makes them a desirable choice for LEO and many MEO and GEO communication satellites. Radiation testing is performed on a single wafer by wafer basis. Random die samples per wafer are selected, packaged and radiation tested to qualify each individual semiconductor wafer-by-wafer. ABSOLUTE MAXIMUM RATINGS Tc @ 25°C Power Dissipation: TO-205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 W TO-257/SMD/ D2 Pac . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 W Input - Output Voltage Differential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . - 55°C to + 150°C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65°C to + 150°C Lead Temperature (Soldering 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C Thermal Resistance, Junction to Case: TO-205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17°C/W TO-257(Isolated), D2 Pac (Isolated).. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 4.2°C/W TO-257 (Non-Isolated) and SMD-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W Maximum Output Current: TO-205. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 A Case-All Others . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Recommended Operating Conditions: Output Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.2 to 57 VDC Input Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.25 to 61.25 VDC Radiation Tolerant - Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 K Rad (Si) Surface Mount Package Soldering Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .250°C 0 04 R2 Supersedes 9 12 R1 OMR117 4/4/2000 11:46 AM Page 2 OMR117AHVSR, OMR117AHVST, OMR117AHVNM, OMR117AHVNH ELECTRICAL CHARACTERISTICS Parameter Reference Voltage (Note 4) Symbol VREF Test Conditions -55°C ≤ TA ≤ 125°C, IL = 8mA (unless otherwise specified) Min. 1.238 Max. 1.262 1.270 1.270 1.270 4.5 V Unit VDIFF = 3.0V, TA = 25°C VDIFF = 3.3V VDIFF = 40V VDIFF = 60V 3.0V ≤ VDIFF ≤ 40V, Vout = Vref, TA = 25°C 3.3V ≤ VDIFF ≤ 40V, Vout = Vref 40V ≤ VDIFF ≤ 60V, Vout = Vref, TA = 25°C 40V ≤ VDIFF ≤ 60V, Vout = Vref • • • • • • • • 1.225 1.225 1.225 Line Regulation (Note 1, 4) RLINE 9 5 10 15 15 15 15 15 5 mV Load Regulation (Note 1, 4) RLOAD VDIFF = 3.0V, 10mA ≤ IL ≤ 1.5A, TA = 25°C VDIFF = 3.3V, 10mA ≤ IL ≤ 1.5A VDIFF = 40V, 10mA ≤ IL ≤ 300mA, TA = 25°C VDIFF = 40V, 10mA ≤ IL ≤ 195mA VDIFF = 60V, 10mA ≤ IL ≤ 30mA mV Thermal Regulation VRTH Vin = 14.6V, IL = 1.5A Pd = 20 Watts, t = 20 ms, TA = 25°C mV Ripple Rejection RN f = 120 Hz, Vout = Vref CAdj = 10 µF, Iout = 100 mA • 66 dB Adjustment Pin Current IAdj VDIFF = 3.0V, TA = 25°C VDIFF = 3.3V VDIFF = 40V 100 (Note 4) Adjustment Pin Current Change ∆IAdj VDIFF = 60V VDIFF = 3.0V, 10mA ≤ IL ≤ 1.5A, TA = 25°C VDIFF = 3.3V, 10mA ≤ IL ≤ 1.5A VDIFF = 40V, 10mA ≤ IL ≤ 300mA, TA = 25°C VDIFF = 40V, 10mA ≤ IL ≤ 195mA 3.0V ≤ VDIFF ≤ 40V, TA = 25°C 3.3V ≤ VDIFF ≤ 40V 3.3V ≤ VDIFF ≤ 60V • • • • • 100 100 100 5 5 5 5 5 µA µA • • • • • • 5 5 10 mA Minimum Load Current ILmin VDIFF = 3.0V, Vout = 1.4V (forced) VDIFF = 3.3V, Vout = 1.4V (forced) VDIFF = 40V, Vout = 1.4V (forced) VDIFF = 60V, Vout = 1.4V (forced) Current Limit (Note 2, 4) ICL VDIFF = 5V VDIFF = 40V, TA = 25°C VDIFF = 60V, TA = 25°C 1.5 0.3 0.05 3.5 1.5 0.5 A Notes: 1.Load and Line Regulation are measured at a constant junction temperature using a low duty cycle pulse technique. Changes in output voltage due to heating effects must be taken into account separately. 2.If not tested, shall be guaranteed to the specified limits. 3.The • denotes the specifications which apply over the full temperature range. 4.Refer to curves for typical characteristics versus Total Dose Radiation Levels. RADIATION TEST PROGRAM The following chart is a summary of the test data collected on Radiation Tolerant OMR117AHV at various doses. The chart depicts the Total Radiation Dose that each device was exposed to on a step stress irradiation basis prior to failure. Failure is defined as any electrical test that does not meet the limits of the device per the published data sheet specifications after radiation testing. Omnirel P/N OMR117AHV Test Points 5K 10K 20K 30K 50K 60K 70K 80K 100K 150K 200K RAD X X X X OMR117 4/4/2000 11:46 AM Page 3 OMR117AHVSR, OMR117AHVST, OMR117AHVNM, OMR117AHVNH OMNIREL’S RADIATION TEST PROCEDURE • • • • • Radiation Testing is performed on a single wafer by wafer basis. Each wafer is identified and a random sample of 5 die per wafer is selected. The die are then individually assembled in a hermetic package, data logged, electrically tested, hi-rel screened and then submitted to radiation testing. The packaged die are submitted to Steady State Total Dose radiation per Method 1019, Condition A, at a dose rate of 50 RAD/sec biased at maximum supply voltage. Final electrical test is performed within two hours of both Total Dose Radiation level from a Cobalt 60 source and 168 hr, 100°C annealing process. Read and record data including two non-radiated control samples. The wafer is then qualified only if samples from wafers meet full electrical specifications after 150% of total dose rating as specified in each product data sheet. Omnirel’s controlling specifications are as follows: For Voltage Regulators the controlling specification is MIL-PRF- 38534/MIL-STD-883. For Rectifiers/Schottky the controlling specification is MIL-PRF-19500/MIL-STD-750. • • AVAILABLE PRODUCT SCREENING Standard Class Level Screening Per MIL-PRF-38535 Screen *Level B Test Method Wafer Lot Acceptance Non-destructive Bond Pull Pre-Cap Visual Inspection Temperature Cycle Constant Acceleration Visual Inspection PIND Test Serialization Pre-Burn-In Electrical Burn-In Interim Electrical PDA Calculations Final Electrical Fine & Gross Seal Radiographic Conformance Inspection Final Visual Inspection --------2010 1010 2001 ------------Data Sheet 1015/160 hrs. ----5% Functional Data Sheet 1014 ----GR A&B 2009 *Level S Test Method 5007 ----2010 1010 2001 ----2020 ----Data Sheet 1015/240hrs. Data Sheet 5% Functional Data Sheet 1014 2012/Two Views GR A&B 2009 Required --------100% 100% 100% 100% --------100% 100% ----Lot 100% 100% ----Sample Sample Required 100% ----100% 100% 100% 100% 100% 100% 100% 100% 100% Lot 100% 100% 100% Sample Sample *Note: For “B” Level Screening add “M” to part number, for “S” Level Screening add “S” to part number. See Part Number Designator. OMR117 4/4/2000 11:46 AM Page 4 OMR117AHVSR, OMR117AHVST, OMR117AHVNM, OMR117AHVNH TYPICAL RADIATION CURVES STANDARD APPLICATION Vin Vout OMR117AHV R1 240Ω IAdj Cin* 0.1 µF R2 Adjust Cout** 1.0 µF * Cin is required if regulator is located an appreciable distance from the power supply. ** Cout is not needed for stability, however it does improve transient response. Vout = 1.25 V (1 + R2/R1) + IAd j R2 Since IAdj is controlled to less than 100 µA, the error associated with this term is negligible in most applications. OMR117 4/4/2000 11:46 AM Page 5 OMR117AHVSR, OMR117AHVST, OMR117AHVNM, OMR117AHVNH MECHANICAL OUTLINES “T” P/N DESIGNATOR .420 .410 .200 .190 .045 .035 .665 .645 .537 .527 “H” P/N DESIGNATOR .150 .140 123 .430 .410 .038 MAX. .750 .500 .005 .035 .025 .100 TYP. .120 TYP. TO-257AA OMR117AHVST Isolated/Front View Pin 1 Pin 2 Pin 3 Tab Adjust Output Input Isolated Add “T” to part number for TO-257 Package TO-205AF (TO-39) OMR117AHVNH Non-Isolated Pin 1 Input Pin 2 Adjust Pin 3 Output (Case) Add “H” to part number for TO-205 Package “R” P/N DESIGNATOR “M” P/N DESIGNATOR .140 .450 .015 .050 .157 .140 .140 .050 1 2 .030 MIN. .625 .415 3 .037 .375 TOP VIEW SIDE VIEW BOTTOM VIEW Hermetic Pac OMR117AHVSR Isolated Front View Pin 1 - Adjust Pin 2 - Output Pin 3 - Input Tab - Isolated Add “R” to part number for D2 Pac Package D2 OMR117AHVNM SMD-1 Pin 1 - Adjust Pin 2 - Input Pin 3 - Output Add “M” to part number for SMD (Surface Mount Package) OMR PART NUMBER DESIGNATOR (Example OMR117AHVSTM) 117 AHV S T M Omnirel Rad-Tolerant Device Type 1% Hi-Volt Isolated Package Package Style Screening Level OMR117 4/4/2000 11:46 AM Page 6 THANK YOU FOR YOUR INTEREST IN OMNIREL’S PRODUCTS! 205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246 Visit Our Web Site at www.omnirel.com
OMR117AHVNM
物料型号: - OMR117AHVSR - OMR117AHVST - OMR117AHVNM - OMR117AHVNH

器件简介: 这些是三端子正压调整型稳压器,封装在高密度密封的外壳中,并且提供高可靠性筛选版本。所有保护特性都集成在电路中,包括热关闭、电流限制和安全区域控制。这些设备能够在有散热的情况下提供高达1.5安培的输出电流。这些设备还具有可从1.2伏至57伏通过外部电阻设定的输出电压。这些设备非常适合需要小尺寸、高可靠性和辐射耐受性的空间应用。

引脚分配: - 调整引脚(Adjust Pin):引脚1 - 输出引脚(Output):引脚2 - 输入引脚(Input):引脚3

参数特性: - 参考电压(VREF):1.238V至1.262V - 线路调整率(RLNE):1.225mV至1.270mV - 负载调整率(RLOAD):15mV - 热调整、纹波抑制(VRTH RN):66mV至5mV - 调整引脚电流(IAd):100μA

功能详解: 这些设备具有辐射耐受性,最高可达150K Rad(Si),并且可以选择通过MIL-STD-883标准的高可靠性筛选。辐射测试是在单个晶圆上进行的,每个晶圆上的随机芯片样本被选取、封装、测试并进行辐射测试以验证每个单独的半导体晶圆。

应用信息: 这些稳压器适用于低地球轨道(LEO)和许多中地球轨道(MEO)和地球静止轨道(GEO)通信卫星。标准应用中需要输入电容(Cin)以确保远离电源时的稳定性,输出电容(Cout)不是必须的,但可以改善瞬态响应。

封装信息: - TO-257封装:在型号中添加“T”以表示TO-257封装。 - TO-205封装:在型号中添加“H”以表示TO-205封装。 - D2 Pac封装:在型号中添加“R”以表示D2 Pac封装。 - 表面贴装封装(SMD):在型号中添加“M”以表示表面贴装封装。
OMR117AHVNM 价格&库存

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