OPE5194WK

GaAlAs Infrared Emitter O PE5194WK The OPE5194WK is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. 5.0 5.7 8.7 7.7 FEATURES • High-output power • Narrow beam angle • Available for pulse operating APPLICATIONS • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission 1.3 Max 2-□0.5 2.0 2.5 ①② 24.0 Min ① ② Anode Cathode STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power Dissipation PD 150 Forward current IF 100 *1 IFP 1.0 Pulse forward current Reverse voltage VR 5.0 Operating temp. Topr. -25~ +85 *2 Tsol. 260. Soldering temp. *1 .Duty ratio = 1/100, pulse width=0.1ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle Symbol VF IR Ct Ie λp Δλ Δθ Conditions IF =100mA VR= 5V f = 1MHz IF=100mA IF= 50mA IF= 50mA IF=100mA 20 100 940 45 ±10 Min. Typ. 1.4 1.7 10 (Ta=25°C ) Unit mW mA A V °C °C Tolerance : ±0.2mm (Ta=25°C) Max. Unit V µA pF mW/㏛ nm nm deg. 27 GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 400 200 100 50 30 10 5 3 1 0.5 0.3 0.1 0 20 40 60 80 Ambient Temperature Ta(℃) 100 OPE5194WK RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25℃ Ta=25 100 80 60 40 20 0 -20 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. 1.0 IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 0.8 0.6 0.4 0.2 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25℃ 0.0 800 Ambient Temperature Ta(℃) FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Ta=25℃ 50 30 20 10 5 4 3 2 1 1.0 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 850 900 950 1000 1050 Emission Wavelength λ(nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25℃ -20° -10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 -30° -40° -50° -60° -70° -80° -90° 1.0 0.5 0 0.5 Relative Radiant intensity 28