GaAs Infrared Emitter C
O PE5294
C The OPE5294 is GaAs infrared emitting diode that is designed for low forward voltage and high reliability. This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has wide beam angle with lensed package and cup frame. DIMENSIONS (Unit : mm)
5.0 5.7 8.7 7.7
FEATURESC • High-output powerC • Wide beam angle • High reliability • Available for pulse operating • Low cost C APPLICATIONSC • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission
1.3 Max
24.0 Min
2-
0.5 2.0 2.5
Anode Cathode
Tolerance : ±0.2mm
STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device.
MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C ) Item Symbol Rating Unit Power Dissipation PDC 150 C Forward current IFC 100 EC CCC 1C IFPC 1.0 AC Pulse forward current Reverse voltage VRC 5.0 C Operating temp. Topr. -25~ +85 ° CC Tsol. 260. ° CC Soldering temp. CCCCCCCCCCCCCC 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle C C Symbol VF IR Ct Ie
p
(Ta=25°C) Conditions IF =100mA VR= 5V f = 1MHz IF=100mA IF= 50mA IF= 50mA IF=100mA Min. Typ. 1.4 20 30 940 45 ±22 Max. 1.7 10 Unit V µA pF mW/ nm nm deg.
25
CC
GaAs Infrared Emitter
FORWARD CURRENT Vs. AMBIENT TEMP.
40 20 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 20 40 60 80 Ambient Temperature Ta() 100
OPE5294
RADIANT INTENSITY Vs. FORWARD CURRENT.
Ta=25 Ta=25
100 80 60 40 20 0 -20
1
3 5 10 30 50 100 200 500 Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP.
IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0
RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH.
Ta=25 0.8 0.6 0.4 0.2 0.0 800
Ambient Temperature Ta()
FORWARD CURRENT Vs. FORWARD VOLTAGE
Ta=25
850 900 950 1000 1050 Emission Wavelength (nm)
100 50 30 20 10 5 4 3 2
ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY
Ta=25 -20° -10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0
-30° -40° -50° -60° -70° -80° -90° 1.0
1 1.0
1.1 1.2 1.3 1.4 Forward Voltage VF(V)
1.5
1.6
0.5 0 0.5 Relative Radiant intensity
26
很抱歉,暂时无法提供与“OPE5294”相匹配的价格&库存,您可以联系我们找货
免费人工找货