OPE5587

High Speed GaAlAs Infrared Emitter C C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES • Ultra high-speed : 25ns rise time • 880nm wavelength • Narrow beam angle • Low forward voltage • High power and high reliability • Available for pulse operating APPLICATIONS • Emitter of IrDA • IR Audio and Telephone • High speed IR communication • IR LANs • Available for wireless digital data transmission O PE5587 DIMENSIONS (Unit : mm) 5.0 1.3 Max 2.0 Min 5.7 8.7 24.0 Min 7.7 2- 0.5 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C ) Item Symbol Rating Unit Power Dissipation PDC 150 C Forward current IFC 100 EC IFPC 1.0 AC Pulse forward current CCCCC 1C Reverse voltage VRC 4.0 C Operating temp. Topr. -25~ +85 ° CC Tsol. 260. ° CC Soldering temp. CCCCCCCCCCCCCC 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Symbol Forward voltage VFC Reverse current IRC Capacitance Ct Radiant intensity Ie Peak emission wavelength pC Spectral bandwidth 50% C Half angle  Optical rise & fall time(10%~90%) Cut off frequency *3 *3 Conditions IF=50 EC VR=4VC f=1 C IF=50 EC IF=50 EC IF=50 C IF=50 C IF=50 C IF D ECEEC DD EC C 13 Min. C C 40 C C C C C Typ. 1.5 C 20 90 880 45 ±10 25/15 14 (Ta=25°C) Max. Unit 2.0 V 10 µEC C C / C C C C C deg. C C ns MHz tr/tf fc . 10logPo(fc MHz)/Po(0.1 MHz)=-3 C C CC C High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 100 80 60 40 20 0 -20 0 20 40 60 80 Ambient Temperature Ta() 100 200 100 50 30 10 5 3 1 0.5 0.3 0.1 C C C C C OPE5587 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 0.8 0.6 0.4 0.2 0.0 700 Ambient Temperature Ta() FORWARD CURRENT Vs. FORWARD VOLTAGE Ta=25 750 800 850 900 950 Emission Wavelength (nm) 100 50 30 20 10 5 4 3 2 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 -20° -10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 -30° -40° -50° -60° -70° -80° -90° 1.0 1 1.0 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 0.5 0 0.5 Relative Radiant intensity 14