OT410T

NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • Hermetically Sealed Device ideal for hostile environments High Sensitivity • Dimensions in mm Specifications: Operating Temperature Range -55°C to 125°C PARAMETERS Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response Rise or Fall Time RL = 100Ω V CC = 10V OT 410D OT 410T OT 410D-1 OT 410D-6 SYMBOL MIN. 3 (1.5) I C(ON) I CED V CED V ECD V CE(SAT) 35 6 5 (2) 12 (4) TYP MAX. 15 (6) 40 UNITS mA mA mA nA V V 0.50 20 80 6 8 V Deg. Deg. µS µS Φ t r, tf Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595 Email: sales@rhopointcomponents.com Website: www.rhopointcomponents.com Rhopoint Components Ltd