PD23-02

PHOTO DIODES 2.4; 3.6 µm Model PD23-02 •Photodiodes PD23-02 are designed for detecting the radiation in the Middle Infrared spectral range from 800 to 2300 nm. Heterostructures with the InGaAsSb sensitive layer and the AlGaAsSb "window" are grown on GaSb substrates. •Photodiodes PD23-02 are mounted in standard 5.4 mm package TO-18. They have the photosensitive area with diameter of 200 µm. Fast response makes possible their use for the detection of high frequency modulated laser or LED emission. •Related products: PD23-02 can be used in optical pair with our LED16÷LED23 and LD200÷LD230. We offer the preamplifier model AM-04 suitable for PD23-02. 2.3 µm 0.2 mm Package TO-18 Parameters Cut-off wavelength, µm (at 10%) Responsivity, A/W (λ=1.95÷2.1µm) Dark Current, µA ( V= - 0.2 V ) ( V= - 0.5 V ) ( V= - 1.0 V ) Impedance, kOhm Capacitance, pF Detectivity, cm.Hz Range, oC Sensitive area diameter, µm Soldering temperature Package 1/2 Min 2.30 0.9 0.5 1.0 1.5 30 10 1 Typ 2.30 1.0 1.0 2.0 3.0 60 20 3 Max 2.35 1.1 2.0 3.0 5.0 100 30 5 (V= -10 mV) (V=0, f=1 MHz) Rise and Fall Time, ns (V=0, 50 Ohm) /W (λp,1000,1) 4.10 10 5.10 10 8.1010 Operating Temperature -40÷+50 200 260 oC TO-18 PD23-02 Spectral Response Typical characteristic t= + 25C AlGaAsSb 100 Basic Circuit Connections Cf Rf Iph PD23-02 0,8 Response, A/W PD23 80 60 40 20 0 GaSb (substr.) GaInAsSb Output voltage Wavelength, mm 1,3 1,8 2,3 Vout= (Iph*Rf) PD23-02 Capacitance vs. Reverse Voltage 18 16 PD23-02 10 1 Typical characteristic Spectral Response t= + 20C Typical characteristic PD23100 T emperature dependance of cut-off T ypical characteristics T= 300 K Dark Current, µ A T=+23 C 80 Responce, arb.un. 60 40 20 0 T= - 43 C T= - 113 C Capacity, pF 14 12 10 8 0 0,2 0,4 0,6 0,8 1 0,1 0,01 0,001 T=300 K T=230 K T=160 K 0,0001 0 0,5 1 1,5 2 2,5 3 1,6 1,8 Reverse Voltage (V) Reverse bias, U, Volts 2 2,2 2,4 Wavelength, µm 2,6 2,8