PJB772CK

PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER L OW SPEED SWITCHING • C omplement to PJD882 • P W 10µs,Duty Cycle50% • P ulse Test PW 350µs,Duty Cycle2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS ( T a = 25 ℃ ) Characteristic C ollector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25℃) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC Tj Tstg Rating -50 -40 -5 -2 -5 -0.6 1 150 55~150 Unit V V V A A A W W ℃ ℃ P in : 1.Emitter 2.Collector 3.Base ORDERING INFORMATION Device P JB772SCT P JB772CK Operating Temperature -20℃～+85℃ Package TO-92 T O-126 ELECTRICAL CHARACTERISTICS Characteristics C ollector Cutoff Current Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *Base Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance ( Ta = 25 ℃ ) Symbol ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT C ob NF Test condition VCB=-30V,IE =0 VEB=-3V,IC=0 VCE =-2V,IC=-20mA VCE =-2V,IC=-1A IC=-2A,IB=-0.2A IC=-2A,IB=-0.2A VCE =-5V,IC=0.1A VCB=-10V,IE =0 f=1MHz VCE =10V,IC=1mA R S=10K,f=1KHz 4 dB 30 60 220 160 -0.3 -1.0 80 55 400 -0.45 -2.0 V V MHz pF Min Typ Max -1 -1 Unit µA µA Noise Figure h FE(2) CLASSIFICATION Classification hFE (2) R 60-120 O 100-200 Y G 200-400 160-320 1-3 2002/01.rev.A PJB772/PJB772S PNP Epitaxial Silicon Transistor S TATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE CURRENT GAIN-BANDWIDTH PRODUCT SAFE OPERATING AREAS DERATING CURVE OF SAFE OPERATING AREAS POWER DERATING 2-3 2002/01.rev.A PJB772/PJB772S PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A