PJB772S

PJB772S

  • 厂商:

    ETC

  • 封装:

  • 描述:

    PJB772S - PNP Epitaxial Silicon Transistor - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
PJB772S 数据手册
PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER L OW SPEED SWITCHING • C omplement to PJD882 • P W 10µs,Duty Cycle50% • P ulse Test PW 350µs,Duty Cycle2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS ( T a = 25 ℃ ) Characteristic C ollector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25℃) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC Tj Tstg Rating -50 -40 -5 -2 -5 -0.6 1 150 55~150 Unit V V V A A A W W ℃ ℃ P in : 1.Emitter 2.Collector 3.Base ORDERING INFORMATION Device P JB772SCT P JB772CK Operating Temperature -20℃~+85℃ Package TO-92 T O-126 ELECTRICAL CHARACTERISTICS Characteristics C ollector Cutoff Current Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *Base Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance ( Ta = 25 ℃ ) Symbol ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT C ob NF Test condition VCB=-30V,IE =0 VEB=-3V,IC=0 VCE =-2V,IC=-20mA VCE =-2V,IC=-1A IC=-2A,IB=-0.2A IC=-2A,IB=-0.2A VCE =-5V,IC=0.1A VCB=-10V,IE =0 f=1MHz VCE =10V,IC=1mA R S=10K,f=1KHz 4 dB 30 60 220 160 -0.3 -1.0 80 55 400 -0.45 -2.0 V V MHz pF Min Typ Max -1 -1 Unit µA µA Noise Figure h FE(2) CLASSIFICATION Classification hFE (2) R 60-120 O 100-200 Y G 200-400 160-320 1-3 2002/01.rev.A PJB772/PJB772S PNP Epitaxial Silicon Transistor S TATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE CURRENT GAIN-BANDWIDTH PRODUCT SAFE OPERATING AREAS DERATING CURVE OF SAFE OPERATING AREAS POWER DERATING 2-3 2002/01.rev.A PJB772/PJB772S PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A
PJB772S
1. 物料型号:PJB772/PJB772S

2. 器件简介: - PJB772/PJB772S是一种音频频率功率放大器,低速度开关的PNP外延硅晶体管,与PJD882互补使用。

3. 引脚分配: - 引脚1:发射极(Emitter) - 引脚2:集电极(Collector) - 引脚3:基极(Base)

4. 参数特性: - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):-50V - 集电极-发射极电压(VCEO):-40V - 发射极偏置电压(VEBO):-5V - 集电极电流(脉冲):-2A - 集电极电流(直流):-5A - 基极电流(直流):-0.6A - 集电极耗散功率(Ta=25°C):150W - 集电极耗散功率(Tc=25°C):55~150W - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

5. 功能详解: - 该晶体管可用于音频频率功率放大,并且在低速度开关应用中有优势。提供了脉冲测试条件下的参数,如脉冲宽度和占空比。

6. 应用信息: - 该晶体管适用于音频频率功率放大和低速度开关应用,与PJD882互补使用。

7. 封装信息: - PJB772SCT:TO-92封装,工作温度范围为-20°C至+85°C。 - PJB772CK:TO-126封装。
PJB772S 价格&库存

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