PJC945CX

PJC945 NPN Epitaxial Silicon Transistor AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. • • C omplement to PJA733 Excellent DC Current Gain Linearly 0.1mA to 50mA Low Output Capacitance Cob=2.5PF(Typ.) @VCB = 6V,f=1MHz Low Noise Figure NF=2.5dB(TYP.) IC = 0.1mA,VCE = 6V Rg= 2KΩ,f=1KHz DC Current Gain Selection Available TO-92 SOT-23 • • • ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Rating C ollector-Base Voltage C ollector-Emitter Voltage Emitter-Base Voltage C ollector Current T otal Device Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic PD PD Tj Tstg Rating 60 50 5 120 450 1.2 150 -55 ~150 Unit V V V mA mW W °C °C P in : 1. Emitter 2. Colletor 3. Base P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device P JC945CT P JC945CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Characteristic C ollector-Base Breakdown Voltage C ollector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage C ollector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain C ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage C urrent-Gain-Bandwidth Product Output Capacitance Noise Figure h FE (2) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE(1) hFE(2) VCE (SAT) VBE (SAT) VBE (on) fT C Ob NF Test Condition Ic = 10µA, IE = 0 Ic =1.0mA, IB = 0 IE = _10µA, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =0.1 mA VCE =6V,Ic =1.0 mA IC=10mA,IB=1mA IC=10mA,IB=1mA IC=0.1mA,VCE =6V VCE =6V,IC=10mA VCB=6V,IE =0 f=1MHZ VCE =6V,IE = _0.5mA f=1KHZ ,Rs=2KΩ Min 80 50 5 Typ Max 0.1 0.1 1 50 70 0.09 0.81 0.6 250 2.5 2.5 70 0.3 1 0.65 450 5 15 Unit V V V µA µA µA 0.55 150 V V V MHz pF dB CLASSIFICATION R 70-140 P 120-240 Q 200-400 K 350-700 Classification hFE(2) 1-2 2002/01.rev.A PJC945 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A