PJD882/PJD882S NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER L OW SPEED SWITCHING • • • C omplement to PJB772 P W 10ms,Duty Cycle50%Pulse Test P W 350µ s, Duty Cycle 2%
T O-92
TO-126
ABSOLUTE MAXIMUM RATINGS ( T a = 25 ℃)
Characteristic C ollector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25℃) Collector Dissipation (Ta=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC Tj Tstg Rating 40 30 5 3 7 0.6 10 1 150 -55~150 Unit V V V A A A W W ℃ ℃
P in : 1.Emitter 2.Collector 3.Base
ORDERING INFORMATION
Device P JD882CT P JD882CK Operating Temperature -20℃~+85℃ Package TO-92 T O-126
ELECTRICAL CHARACTERISTICS(T a=25 ℃)
Characteristics C ollector Cutoff Current Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *Base Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
Symbol ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT C ob
Test condition VCB=30V,IE =0 VEB=3V,IC=0 VCE =2V,IC=20mA VCE =2V,IC=1A IC=2A,IB=0.2A IC=2A,IB=0.2A VCE =5V,IC=0.1A VCB=10V,IE =0 f=1MHz
Min
Typ
Min 1 1
Unit µA µA
30 60
150 160 0.3 1.0 90 45 400 0.5 2.0 V V MHz pF
h FE(2) CLASSIFICATION Classification hFE (2) R 60-120 O 100-200 Y 160-320 G 200-400
1-3
2002/01.rev.A
PJD882/PJD882S NPN Epitaxial Silicon Transistor
.
S TATIC CHARACTERISTIC CURRENT GAIN-BANDWIDTH PRODUCT
B ASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE
S AFE OPERATING AREAS
COLLECTOR OUTPUT CAPACITANCE
DERATING CURVE OF SAFE OPERATING AREAS
DC CURRENT GAIN
POWER DERATING
2-3
2002/01.rev.A
PJD882/PJD882S NPN Epitaxial Silicon Transistor
3-3
2002/01.rev.A
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