RMDA1840

RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of applications, such as a driver amplifier or a frequency multiplier. 4 mil substrate Small-signal gain 22 dB (typ.) Pout 1 dB comp 23 dBm (typ.) Chip size 4.67 mm x 2.00 mm Features Absolute Maximum Ratings Parameter Positive DC voltage (+5 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC Tstg RJC Value +6 -2 +8 442 +15 -30 to +85 -55 to +125 53 Units Volts Volts Volts mA dBm °C °C °C/W Electrical Characteristics (At 25°C), 50 Ω system, Vd = +5 V, Quiescent Current Idq = 400 mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -5 dBm Gain Variation vs Frequency Gain at 1dB Compression Power Output at 1 dB Compression Min 18 Typ -0.2 Max Unit 40 GHz V dB dB dB dBm Parameter Power Output Saturated: Pin = +3 dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -5 dBm) Output Return Loss (Pin = -5 dBm) Min 21 Typ 24 15 8 10 Max Unit dBm % dB dB 20 22 +/-2.5 21 23 Notes: 1. Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. CAUTION: THIS IS AN ESD SENSITIVE DEVICE. CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate Step 2: Connect the DC supply grounds to the grounds frequency band. of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 6: Follow turn-off sequence of: Step 3: Slowly apply positive drain bias supply voltage (i) Turn off RF input power, of +5 V to Vd. (ii) Turn down and off drain voltage (Vd), Step 4: Adjust gate bias voltage to set the quiescent (iii) Turn down and off gate bias voltage (Vg). current of Idq = 400 mA. Recommended Procedure for Biasing and Operation Figure 1 Functional Block Diagram Drain Supply Drain Supply Vd1 Vd2 Drain Supply Vd3 Drain Supply Vd4 MMIC Chip RF IN RF OUT Ground Back of Chip Gate Supply Vg1 Gate Supply Vg2 Gate Supply Vg3 Gate Supply Vg4 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Figure 2 Chip Layout and Bond Pad Locations Chip Size is 4.67 mm x 2.0 mm x 100 µm. Back of chip is RF and DC ground 1.06 0.83 0.60 Dimensions in mm 1.50 2.44 3.16 4.15 4.57 2.00 0.0 0.0 0.11 1.23 2.35 3.22 3.84 4.67 Figure 3 Recommended Application Schematic Circuit Diagram 10,000pF Drain Supply Vd = +5 V L L L = Bond Wire Inductance 10,000pF 100pF L 100pF L L L L 100pF L 100pF L L MMIC Chip RF IN Ground (Back of Chip) RF OUT L L 100pF L 100pF L L 100pF 100pF L L L 10,000pF L Gate Supply Vg L 10,000pF Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Figure 4 Recommended Assembly Diagram Vd (Positive) 10,000pF Die-Attach 80Au/20Sn 100pF 100pF 100pF 100pF 10,000pF 5mil Thick Alumina 50-Ohm 5 mil Thick Alumina 50-Ohm RF Output RF Input 100pF 2 mil Gap 100pF 100pF 100pF 10,000pF Vg (Negative) 10,000pF L< 0.015” (4 Places) Note Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. If output power level detection is not desired, do not make connection to detector bond pad. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Performance Data Pout vs. Pin Vd = 5V, Id = 400mA 27 25 Pout (dBm) 23 18 GHz 21 19 17 15 -6 -4 -2 0 2 4 Pin (dBm) 29 GHz 40 GHz Gain vs. Pin Vd = 5V, Id = 400mA 23 22.5 22 Gain (dB) 21.5 21 20.5 20 19.5 19 -6 -4 -2 0 2 4 Pin (dBm) 18 GHz 29 GHz 40 GHz Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Performance Data 30 28 Pin = -5 dBm Gain vs. Frequency Power In = -5, 0, +5 dBm Vd = 5V, Id = 400mA Gain (dB) Power Out (dBm) 26 24 22 20 18 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Pin = 0 dBm Pin = +5 dBm S21, S11, S22 Mag vs. Frequency Vd = 5V, Id = 400mA 30 S21 S21, S11, S22 Mag (dB) 20 10 0 -10 -20 -30 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) S22 S11 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION North America D&L Technical Sales 6139 S. 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Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com Customer Support www.raytheon.com/micro 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com Characteristic performance data and specifications are subject to change without notice. Revised January 15, 2001 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810