RMLA3565-58

RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide low noise, high linearity and low current. 19.0 dB Gain Typical 1.5 dB Noise Figure, Typical 5.0 - 6.5 GHz Single Positive Bias Small Outline Metal Base Quad Plastic Package Internal 50Ω Matching Features Absolute Maximum Ratings1 Parameter Positive Drain DC Voltage (No RF) RF Input Power (from 50Ω source) Drain Current Case Operating Temperature Storage Temperature Range Soldering Temperature Symbol Vdd Pin(CW) Idd Tc Tstg Tsolder Value 6.5 0 130 -35 to 85 -40 to 110 220 Unit V dBm mA °C °C °C Electrical Characteristics2 Parameter Min Typ 19.0 -0.008 1.4 1.5 10.0 Max 6.5 Unit GHz dB dB/°C dB dB dBm Parameter OIP3 @ 5.5 GHz, +3 dBm Pout total Idd Vdd Input Return Loss Output Return Loss Thermal Resistance Rjc (Channel to Case) Min 17 3.0 Typ 21.0 70.0 4.0 -15.0 -10.0 135 Max Unit dBm mA V dB dB °C/W Frequency Range 3.5 17.0 Gain (Small Signal)3,4 Gain Variation vs Temp Noise Figure4 3.5 - 5 GHz 5 - 6.5 GHz Power Out, P1dB @ 5.5 GHz 8.0 85.0 6.0 2.2 1.6 Notes: 1. No permanent damage with only one parameter set at maximum limit and all other parameters at typical conditions 2. All parameters met at Tc = +25 °C, Vdd = 4.0V 3. Pin = -20 dBm, Vdd = 4.0 V, Frequency 3.5 - 6.5 GHz 4. Data de-embedded from fixture loss Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for 3.5 to 6.5 GHz applications. Test Fixture Figure 1 shows the outline and pin-out descriptions for the packaged device. Figure 2 shows the functional block diagram of the packaged product. A typical test fixture schematic showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board corresponding to the schematic diagram. A typical performance obtained from the test fixture is shown in figure 5. The following should be noted: (1) Package pin designations are as shown in figure 1. (2) Vd is the Drain Voltage (positive) applied at the pins of the package (3) Vdd is the positive supply voltage at the evaluation board terminal Figure 1 Package Outline and Pin Designations Dimensions in inches TOP VIEW 0.200 SQ. 654 BOTTOM VIEW 456 Pin# 1 2 3 4 5 6 7 8 9 10 11 12 13 Description N/C RF Out GND N/C GND N/C GND RF In N/C N/C N/C Vd GND (Package Base) 7 8 0.030 9 3 2 1 0.011 10 11 12 0.015 3 2 1 7 8 9 0.020 0.041 12 11 10 PLASTIC LID 0.008 0.015 0.282 0.075 MAX. SIDE SECTION Figure 2 Functional Block Diagram Ground Pins# 3,5,7,13 Ground Pin# 5 N/C 1,4,6,9,10,11 (Recommend grounding externally to PC board) Ground Pin# 7 RF IN Pin# 8 RF OUT Pin# 2 Vd Pin# 12 Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Figure 3 Schematic for a Typical Test Evaluation Board (RMLA3565-58-TB) RF in J1 Ray LA3565 -58 RF out J2 C2 (OPT) GRND P2 C1 C3 Vdd P1 Figure 4 Layout and Assembly of Test Evaluation Board (RMLA3565-58-TB) U1 RF In J1 RF Out J2 C1 C2 Ground (GND) P2 Vdd P1 Test Procedure for the evaluation board (RMLA3565-58-TB) The following sequence of procedure must be followed to properly test the power amplifier: Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for DC supplies. Step 3: Apply drain supply voltages of +4.0 V to evaluation board terminal Vdd. Part C1 C2 U1 P1, P2 J1, J2 Board Value 330 pF 4.75 uF RMLA3565-58 Terminal SMA Connectors RO4003(Rogers) Step 4: After the bias condition is established, RF input signal may now be applied. Step 5: Follow turn-off sequence of: (i) Turn off RF Input Power (ii) Turn down and off Vdd EIA Size Vendor(s) AVX, Murata, Novacap, Sprague, ATC, AVX, Murata, Raytheon Samtec E.F. Johnson Raytheon Parts List for Test Evaluation Board (RMLA3565-58-TB) .04” x .02” .14”x .11” .28” x .28” x .07 1.99x1.50x.032 Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data 2.20 RMLA3565-58 Noise Figure Vs Frequency for Vdd from 3 Vdc to 6 Vdc (25°C) NF (3V) 2.00 1.80 NF (dB) 1.60 1.40 1.20 1.00 0.80 3.5 4 4.5 5 Frequency (GHz) 5.5 6 6.5 NF (4V) NF (5V) NF (6V) RMLA3565-58 Noise Figure (4Vdc) Change Vs Temperature 0.5 0.4 0.3 0.2 0.1 NF (dB) 0 -0.1 -0.2 -0.3 -0.4 -0.5 3.5 4 4.5 5 Hot (85 deg C) minus Ambient Cold (-35 deg C) minus Ambient 5.5 6 6.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data 20.5 RMLA3565-58 Small Signal Gain (Tcase = 25°C) Vs Vdd and Frequency 20 19.5 S21 (dB) 19 18.5 18 3 Vdc 4 Vdc 5 Vdc 6 Vdc 17.5 17 3.5 4 4.5 5 5.5 Frequency (GHz) 6 6.5 RMLA3565-58 Small Signal Gain (Vdd = 4 Vdc) Vs Temperature and Frequency 20.5 20 19.5 S21 (dB) 19 18.5 18 25 deg C 17.5 - 35 deg C 85 deg C 17 3.5 4 4.5 5 5.5 6 6.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data 0 3.5 4 RMLA3565-58 Input Return Loss Vs Drain Voltage 4.5 5 5.5 6 6.5 -5 S11 (dB) -10 -15 S11 (3V) -20 S11 (4V) S11 (5V) S11 (6V) -25 Frequency (GHz) RMLA3565-58 Output Return Loss Vs Drain Voltage 0 3.5 4 4.5 5 5.5 6 6.5 -5 -10 S22 (dB) -15 -20 -25 S22 (3V) S22 (4V) S22 (5V) S22 (6V) -30 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data 14 13 12 11 10 9 8 7 6 3 RMLA3565-58 1 dB Compression (5.5 GHz) Vs Drain Voltage and Temperature P1dB (dBm) 25 deg C - 35 deg C 85 deg C 4 5 6 Drain Voltage (Vdc) RMLA3565-58 Third Order Intercept Vs Drain Voltage and Temperature 19.5 19 18.5 18 OIP3 (dBm) 17.5 17 16.5 16 15.5 15 14.5 3 4 5 6 25 deg C - 35 deg C 85 deg C Drain Voltage (Vdc) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data 0.11 0.105 0.1 0.095 RMLA3565-58 Drain Current (Quiescent) Vs Drain Voltage and Temperature Iddq (Amps) 0.09 0.085 0.08 25 deg C 0.075 0.07 0.065 0.06 3 4 5 - 35 deg C 85 deg C 6 Drain Voltage (Vdc) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 8 Raytheon RF Components 362 Lowell Street Andover, MA 01810