RMM2080

RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques. Features 2-18 GHz Bandwidth 24 dB Typical Gain ±2 dB Gain Flatness 20 dBm Output Power Typical Three Stages of Distributed Amplification Gain Control of up to 70 dB range Dual-Gate Ion-Implanted 0.5 µm FETs Chip Size: 4.14mm x 3.22mm x 0.1mm Absolute Maximum Ratings Parameter Positive Drain DC Voltage (+7V typ) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (channel to backside) Symbol Vd Vg Vgd Id PIN(CW) Tcase Tstorage Rjc Value +8 -2 10 400 +8 -30 to 85 -55 to 125 22 Unit V V V mA dBm °C °C °C/W Electrical Characteristics (At 25°C) 50 Ω system, Vd=+7 V, Quiescent current (Idq) =300 mA GC1, GC2= +1.5 V Parameter Frequency Range Gate Supply Voltage (Vg)1 RF Output Power @ -1 dBc Small Signal Gain Gain Flatness vs. Freq. Input/Output Return Loss Min 2 Typ -0.7 20 24 ±2 7 Max 18 Unit GHz Volts dBm dB dB dB Parameter Gain Control Range Gain Control Voltage, GC1&22 Min 70 -5 Typ Max +1.5 Unit dB Volts 18 Notes: 1. Typical range of the negative gate voltage is -0.9 to 0.0V to set typical Idq of 300 mA. 2. GC1 and GC2 of +1.5V and VG23=open corresponds to maximum gain and power. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Figure 1 Block Diagram and Circuit Schematic Figure 2 Location and Size of Bonding Pads Dimensions in inches Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Figure 3 Example of Assembled Module GC VG VD Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Performance Data 0 S11 Input & Output Return Loss Vd=7.0V, Id=0.3A, GC1,2=1.5V 5 10 15 20 25 S22 30 35 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Small Signal Gain Vd=7.0V, Id=0.3A, GC1,2=1.5V 30 28 26 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 15 10 5 0 -5 1.5 30 25 20 Gain & Pout vs, Control Voltage Vd=7.0V, Id=0.3A @ GC1,2=1.5V 35.00 Gain 30.00 P1 25.00 20.00 15.00 2GHz 10GHz 18GHz 10.00 5.00 0.00 1 0.5 0 -0.5 Vcontrol (V) -1 -1.5 -2 The above data is derived from fixtured measurements which include 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the RF input and output. The Id @ 1 dB compression increases to approximately 0.45 A. The dc supply should be able to support the required current to achieve the above performance. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810