RMWL38001

RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWL38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. 4 mil substrate Noise figure 2.7 dB (typ.) Small-signal gain 22 dB (typ.) 1dB compressed Pout 13.5 dBm (typ.) Chip size 2.9 mm x 1.25 mm Features Absolute Maximum Ratings Parameter Positive DC voltage (+4 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC Tstg RJC Value +6 -2 8 75 +6 -30 to +85 -55 to +125 169 Unit Volts Volts Volts mA dBm °C °C °C/W Electrical Characteristics (At 25°C), 50 Ω system, Vd=+4 V, Quiescent Current Idq=50 mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Noise Figure Gain Small Signal at Pin=-20 dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Min 37 Typ -0.5 2.7 22 1.5 21 13.5 Max 40 4.0 Unit GHz V dB dB dB dB dBm Parameter Power Output Saturated Drain Current at Pin=-20 dBm Drain Current at 1dB Compression Input Return Loss (Pin=-15 dBm) Output Return Loss (Pin=-15 dBm) OIP3 Min Typ 15 50 55 12 13 23 Max Unit dBm mA mA dB dB dBm Note: 1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. Figure 1 Functional Block Diagram Drain Supply Vd1 Drain Supply Vd2 Drain Supply Vd3 Drain Supply Vd4 MMIC Chip RF IN RF OUT Ground (Back of Chip) Gate Supply Vg1 Gate Supply Vg2 Figure 2 Chip Layout and Bond Pad Locations Chip Size is 2.9 mm x 1.25 mm x 100 µm. Back of chip is RF and DC ground Dimensions in mm 0.0 1.25 0.293 1.476 1.7375 2.013 2.9 1.25 0.774 0.6245 0.475 0.775 0.6255 0.476 0.0 0.0 0.645 0.895 1.895 2.645 2.9 0.0 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Figure 3 Recommended Application Schematic Circuit Diagram 10,000pF 100pF L L MMIC Chip RF IN RF OUT Drain Supply Vd=+4 V L = Bond Wire Inductance L 100pF L L 10,000pF L 100pF L L L Ground (Back of Chip) L L 100pF L L 100pF Gate Supply Vg Figure 4 Recommended Assembly Diagram Vdd (Positive) 10,000pF 10,000pF Die-Attach 80Au/20Sn 100pF 5mil Thick Alumina 50-Ohm RF Input 100pF 100pF 5 mil Thick Alumina 50-Ohm RF Output 100pF 100pF 2 mil Gap Vg (Negative) L< 0.015” (4 Places) Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VDS) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq=50 mA. Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Performance Data RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, Vd=4V, Idq=50mA, Chip Bonded into 50 ohm Test Fixture 30 S21 20 10 S21 (dB) 0 S11 -10 S22 -20 -30 0 10 20 30 40 50 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Performance Data 4 RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, On-Wafer Measurements, Vd=4V, Idq=50mA 3 Noise Figure (dB) 2 1 0 37 37.5 38 38.5 Frequency (GHz) 39 39.5 40 RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Noise Figure, Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture 4 3.5 Noise Figure (dB) 3 65mA 2.5 50mA 2 35 36 37 38 39 40 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Performance Data 26 RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture 25 65mA 24 Gain (dB) 23 50mA 22 21 20 35 36 37 38 39 40 Frequency (GHz) RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Power Performance, On-Wafer Measurements, Vd=4V, Idq=50mA 20 18 Output Power (dBm) 16 3dB compressed 14 1dB compressed 12 10 37 37.5 38 38.5 Frequency (GHz) 39 39.5 40 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION North America D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. 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Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com Customer Support www.raytheon.com/micro 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com Characteristic performance data and specifications are subject to change without notice. Revised March 14 2001 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810