S175-50

S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is built using Gold Topside Metal, diffused emitter ballast resistors and silicon nitride passivation, providing the user with the Highest MTTF available. CASE OUTLINE 55HX, Style 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 270 Watts 110 Volts 4.0 Volts 20 A - 65 to +150 oC +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 30 MHz Vcc = 50 Volts At Rated Power Out MIN 175 3.5 17 17.5 65 30:1 TYP MAX UNITS Watts Watts dB % BVebo BVces BVceo Zin ZI Cob hFE IMD Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Series Input Impedance Series Load Impedance Output Capacitance DC - Current Gain Intermodulation Distortion Lev. Ie = 10 mA Ic = 100 mA Ie = 100 mA At Rated Pout & Freq. At Rated Pout & Freq. Vcb = 50 V, Ie = 0 Vce = 5 V, Ic = 2 A At Rated Pout 4 110 53 0.6-j0.4 4.6+2.1 180 10 -35 Volts Volts Volts OHMS OHMS dBc Initial Issue June, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 S175-50 S175-50 2-30 MHz, 300 Watts Linear Amplifier L2 R3 RF IN T1 R4 C7 C2 C4 R5 T2 Q2 R6 L1 R1 + Vbb R2 BYI-1 L3 C6 T3 Q1 C5 +50V C8 C9 C10 RF OUT - C1 C3 Q1,Q2=Ghz S175-50 BYISTOR=GHz BYl-1 C1,C3,C5,C6,C7,C8=0.1mF ceramic C2=25-240pF Compression Mica C4=75-480pF Compression Mica C9=10mF, 50V, Electrolytic C10=2700pF DM15 L1=6 turns on Indiana General F627-9, H Material L2,L3=2.2mH, Molded Inductor R1,R2=22W, 2 Watts R3,R6=220W, 2 Watts R4,R5=10W, 1/4 Watt August 1996 TRANSFORMER DETAILS T1: 8 beads of Indiana General F625-9, H material on two brass tubes. The primary is four turns of #20 vinyl clad wire wound through the brass tubes T2: #20 twisted pair, approximately 2 crests per centimeter, wound on Indiana General F624-19, H material T3: 10 beads of Indiana General F627-8, H materail mounted on two brass tubes. The secondary consist of 3 #20 vinyl clad wires in parallel. The three wires should be wound to produce a 2:1 turns ratio