SBR20150CTI

SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF(AV) Rectangular Waveform VRRM IR@150V, Tj=25oC Tj(operating/storage) 20 150 12 -65 to 200 Units A V nA, typ O C Device optimized for high temperature Power Supply applications MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263 packages ELECTRICAL: * Ultra High Thermal Reliability * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 200OC Operating Junction Temperature Case Styles SBR20150CT SBR20150CTI SBR20150CTB 2 1 Anode Common Cathode 2 3 Anode 1 Anode Common Cathode 3 Anode Anode 1 Common Cathode 2 3 Anode TO-220AB TO-262 TO-263 _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 1 SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified) SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave)-50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-2Khz) Instantaneous Forward Voltage (per leg) IF = 10A; TJ = 25OC IF = 20A; TJ = 25OC IF = 10A; TJ= 125OC Maximum Instantaneous Reverse Current at Rated VRM TJ = 25OC TJ = 125OC Maximum Rate of Voltage Change (at Rated VR) Maximum Thermal Resistance JC Operating and Storage Junction Temperature NOTE: Dice are available for customer applications. * Pulse width < 300 uS, Duty cycle < 2% VRM VRWM VRRM VR(RMS) IO IFSM IRRM Typ 0.82 0.94 0.67 Typ 0.012 0.09 10,000 2 -65 to +200 150 150 20 180 3 Max 0.86 0.98 0.71 Max 5 1 UNITS Volts Volts Amps Amps Amps VF Volts IR * uA mA V/uS O dv/dt RθJC TJ C/W O C _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 2 SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel 1 Tj=200C Tj=175C Tj=125C Tj=100C Tj=75C 100 If, Instantaneous Forward Current (Amps) 0.1 Ir, Reverse Current (mA) Tj=200C 0.01 10 Tj=175C Tj=150 Tj=125 0.001 0.0001 Tj=25C 1 Tj=100 0.00001 Tj=75C Tj=25C 0.000001 0 20 40 60 80 100 120 140 160 Vr, Reverse Voltage (Volts) 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Vf, Instantaneous Typ Forward Voltage (Volts) Figure 1: Typical Reverse Current Figure 2: Typical Forward Voltage If, Average Forward Current (Amps) 12 10 8 6 4 2 0 100 110 120 130 140 150 160 170 180 190 200 Tc, Case Temp (C) Figure 3: Current Derating, Case APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part.. 2372-C Qume Drive, San Jose, CA 95131, USA Ph: 408 324 0918 FAX: 408 955 0604 Homepage: www.apdsemi.com email: info@apdsemi.com _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 3