SemiWell Semiconductor
SCP12C60
Symbol
3. Gate
○ ○
Silicon Controlled Rectifiers
▼
1 23
Features
Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Non-iosolated Type
◆
○
2. Anode
1. Cathode
TO-220
General Description
Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 109 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 7.6 12 132 87 50 5 0.5 2 5.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A A2 s A/㎲ W W A V °C °C
Aug, 2003. Rev. 3
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCP12C60
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 24 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger Current (2) TC = 25 °C ─ ─ 15 mA tp=380㎲ ─ ─ ─ ─ ─ ─ 10 200 1.6 ( TC = 25 °C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
㎂
VTM
V
VD = 6 V(DC), RL=10 Ω VGT Gate Trigger Voltage (2) TC = 25 °C ─ ─ 1.5 V
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage
VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2 200
─ ─
─ ─
V
Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open
V/㎲
IH
Holding Current
TC = 25 °C
─
─
20
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient
─ ─
─ ─
1.3 60
°C/W °C/W
※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement.
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SCP12C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
10
1
VGM(5V) PGM(5W)
Max. Allowable Case Temperature [ C]
o
120
θ = 180
100
o
Gate Voltage [V]
IGM(2A)
10
0
PG(AV)(0.5W)
25 C
o
80
π θ
2π
60
360°
θ
40 0
: Conduction Angl e
VGD(0.2V)
10
-1
10
-1
10
0
10
1
10
2
10
3
10
4
1
2
3
4
5
6
7
8
9
Gate Current [mA]
Average On-State Current [A]
Fi g 3. Typi cal Forward Voltage
10
3
Fi g 4. Th ermal R esponse
10
1
Transient Thermal Impedance [ C/W]
o
10
0
On-State Current [A]
10
2
125 C
o
10
-1
10
1
10
-2
25 C
o
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fi g 6. Typi cal Gate Tri gger Current vs. Junction Temperature
VGT(25oC)
VGT(t C)
IGT(25 C)
IGT(t C)
o
o
o
1
1
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
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SCP12C60
Fi g 7. Typi cal Ho ldi ng C urrent
10
12
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
θ = 180 10 θ = 60 θ = 30 6
o o
o
θ = 90
o
θ = 120
o
8
IH(25oC)
IH(t C)
o
1
4
2
0.1 -50
0
0
50
100
o
150
0
1
2
3
4
5
6
7
8
Junction Temperature[ C]
Average On-State Current [A]
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SCP12C60
TO-220 Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
φ
E B
A C1.0
H
I
φ
F
C M
G 1 D 2 3
L
1. Cathode 2. Anode 3. Gate
N O
J K
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