SED1330
CMOS GRAPHIC LCD CONTROLLER
This part is replaced by SED1335. Some pin differences between SED1330 and SED1335 exist. Please check SED1335 data sheet. S-MOS Systems, Inc., will continue to support existing designs which use SED1330. s DESCRIPTION The SED1330 is a CMOS low-power dot matrix liquid crystal graphic display controller. The device stores in external RAM display data sent by an 8-bit microcomputer, and generates all the signals required by the LCD drivers. The LSI incorporates an internal character generator ROM which supports user-defined characters (also an external CGROM can be supported). The SED1330 can be interfaced to high-speed microprocessors such as the Intel family or Motorola family. The controller supports a set of rich commands that will allow the user to create a layered display of characters and graphics. Also, the controller functions as a pipeline buffer between the MPU and display memory so that low-cost, medium-speed SRAM can be used. s FEATURES
• CMOS low-power graphic and character display controller interface is compatible • Selectable MPUand the Motorola family with both the Intel family • Smooth scrolling support: • •
Horizontal and vertical scroll Scrolling of selected areas of the display Multimode display: 2 layers of overlapping character and graphics 3 layers of overlapping graphics Selectable display synthesis: Inverse video Flashing display, cursor on/off/blink Under and bar cursor, block cursor Simple animation
• Programmable cursor • Internal character generator ROM • Supports external character generator ROM: • • • • •
8 × 8 or 8 × 16 pixel characters Allows mixing of ROM and RAM character sets Supports 64K bytes of memory: 2 of 32K × 8 100ns SRAM or 8 of 8K × 8 100ns SRAM Display duty .................................. 1/2 to 1/256 Low power dissipation ................ 5mA (typical) 0.05µA (typical), standby Logic power supply ........................ 4.5 to 5.5V Package ................ Plastic QFP5-60 pin (FBA) Plastic QFP6-60 pin (FBB)
s SYSTEM BLOCK DIAGRAM
DATA
CPU
68xx 80xx
CONTROL
SED1330F
LCD
SRAM
125
SED1330
s BLOCK DIAGRAM
Video RAM CG RAM
VA0 to VA15
External CG ROM
VD0 to VD7 YSCL,YDIS
LCD
XSCL, XECL XD0 to XD3
XD3 D7 D6 D5 D4 D3 D2 D1 D0 VDD A0 CS XD XG SEL1
VCE
VRAM Interface
VR/W
I/O Register
LCD Controller
Cursor Address Controller
Display Address Controller
Refresh Address Counter
Dot Counter
CG ROM
MPU Interface
LP, WF
Layered Display Controller
OSC
A0, CS
D0 to D7
RD, WR
SEL1 SEL0
RES
XD
s PINOUT
XG SEL1 SEL2 WR RD NC NC RES NC VCE VR/W VA0 VA1 VA2 VA3 VA4 VA5 VA6 VA7
XD CS A0 VDD D0 D1 D2 D3 D4 D5 D6
55
50
45
40
60 1 5
SED1330FBA Index
30 29
VA8 VA9 VA10 VA11 VA12 VA13 NC VA14 VA15 VD0 VD1 VD2
6
10
15
20
VD3 VD2 VD1 VD0 VA15 VA14 VA13 VA12 VA11 VA10 VA9 VA8 VA7 VA6 NC
45 46
60 1
D7 XD3 XD2 XD1 XD0 XECL XSCL VSS LP WF YDIS YD YSCL VD7 VD6 VD5 VD4 VD3
126
VA5 VA4 VA3 VA2 VA1 VA0 VR/W VCE NC RES NC NC RD WR SEL2
VD4 VD5 VD6 VD7 YSCL YD YDIS WF LP VSS XSCL XECL XD0 XD1 XD2
31 30
SED1330FBB
Index
16 15
XG
SED1330
s PIN DESCRIPTIONS Pin Name XG XD VDD VSS SEL1, 2 D0 to D7 A0 RD WR CS RES VA0 to VA15 VD0 to VD7 VR/W VCE XD0 to XD3 XSCL XECL LP WF YSCL YD YDIS Pin No. SED1330FBA 54 55 58 13 53 • 52 59 to 60 1 to 6 57 50 51 56 47 43 to 30 28 to 27 26 to 19 44 45 10 to 7 12 11 14 15 18 17 16 SED1330FBB 17 18 21 36 16 • 15 22 to 29 20 13 14 19 10 6 to 1 59 to 50 49 to 42 7 8 33 to 30 35 34 37 38 41 40 39 I/O I O +5V GND (0V) I I/O I I I I I O I/O O O O O O O O O O O Functions Oscillator terminal Oscillator terminal Power supply Power supply MPU interface format selection Data bus Data type selection 80 series Read strobe signal 68 series “E” clock 80 series Write strobe signal 68 series R/W signal Chip select Reset VRAM address bus VRAM data bus VRAM R/W signal Memory control signal Dot data output bus to X driver Dot data shift clock for X driver Chip enable shift clock for Y driver Dot data latch pulse Frame signal Scan data shift clock for Y driver Scan data output Power down signal when display OFF
NC: No Connection
s ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings
•
(VSS = 0V) Symbol VDD VI PD Topr Tstg Tsol Ratings –0.3 to 7.0 –0.5 to VDD+0.5 300 –20 to 75 –60 to 150 260°C, 10s (at lead) Unit V V mW °C °C —
Parameter Supply voltage Input voltage Power dissipation Operating temperature Storage temperature Soldering temperature and time
127
SED1330
•
DC ELECTRICAL CHARACTERISTICS Parameter Operating voltage Register data retention voltage High level input voltage Low level input voltage High level output voltage Low level output voltage High level input voltage Low level input voltage High level output voltage Low level output voltage Positive trigger threshold voltage Negative trigger threshold voltage Symbol VDD VOH VIHT VILT VOHT VOLT VIHC VILC VOHC VOLC VT+ VT– ILI ILO IDDA IDDS fOSC fCLK Rf
(VDD = 5V±10%, VSS = 0V, Ta = –20 to 75°C) Condition Min 4.5 2.0 D0 to D7, A0, CS, RD, WR, VD0 to VD7, IOH= –5.0mA, IOL=5.0mA, VR/W, VCE, REF IOH=1.6mA, IOL= –1.6mA, SEL1, 2, SYNC, YD, XD0 to YSCL, YDIS, OSC1, OSC2 RES * VI=VDD or VSS fOSC=10MHz, No load
(No external V-RAM) XG=CS=VDD
Typ 5.0 — — — — — — — — —
Max 5.5 6.0 VDD+0.3 0.8 — 0.4 — 0.2VDD — 0.4
Unit V V V V V V V V V V V V µA µA mA µA MHz MHz MΩ
T T L C M O S
SCHMITT
2.2 –0.3 2.4 — 0.8VDD — —
XD3, XSCL, XECL, LP, FR, VDD–0.4
0.5VDD 0.7VDD 0.8VDD 0.2VDD 0.3VDD 0.5VDD — — — — 1.0 — 0.5 0.05 0.10 8 0.05 — — 1.0 2.0 5.0 12 20 10.0 10.0 5.0
Input leakage current Output leakage current Average operating current Standby current Oscillation frequency External clock frequency Feed back resistance
AT X’tal XG, XD
* RES input pulse should be longer than 1.0ms. VL5 should be OFF when RES is “L”.
128
SED1330
•
°
AC CHARACTERISTICS System Bus READ/WRITE Timing I (8080)
tAH8
A0, CS
tAW8 tCYC tCC tDS8
WR, RD
tDH8
D0~D7 (WRITE)
tACC8 tOH8
D0~D7 (READ)
Signal A0, CS WR, RD
Parameter Address hold time Address setup time System cycle time Control pulse width Data setup time Data hold time RD access time Output disable time
Symbol tAH8 tAW8 tCYC tCC tDS8 tDH8 tACC8 tOH8
D0 to D7
Rating Min Max 10 — 30 — *1 — 220 — 120 — 10 — — 120 10 50
Unit ns ns ns ns ns ns ns ns
Remark
CL = 100 pF + 1TTL
*1. tCYC = 2tc + tCC + tCEA + 75 > tACV + 245 ................ Memory control/movement control commands. = 4tC + tCC + 30 .............................................. All other commands.
129
SED1330
°
System Bus READ/WRITE Timing II (6800)
tCYC6
E
tAW6 tEW
R/W
tAH6
A0, CS
tDS6 tDH6
D0~D7 (WRITE)
tACC6 tOH6
D0~D7 (READ)
Signal
Parameter System cycle time Address setup time Address hold time Data setup time Data hold time Output disable time Access time Enable pulse width
Symbol tCYC6*1 tAW6 tAH6 tDS6 tDH6 tOH6 tACC6 tEW
A0, CS, R/W
D0 to D7
E
Rating Min Max *2 — 30 — 10 — 120 — 10 — 10 50 — 120 220 —
Unit ns ns ns ns ns ns ns ns
Remark
CL = 100 pF + 1 TTL
*1. tCYC6 means a cycle of (CS.E) not E alone. *2. tCYC6 = 2tc + tEW + tCEA + 75 > tACV + 245 .............. Memory control/movement control commands. = 4tC + tEW + 30 ............................................ All other commands.
130
SED1330
°
Display Memory READ Timing
tC
EXTφO
tW tCE tW
VCE
tCYR
VA0~VA15
tASC tAHC tRCS tCEA tACY tRCH tCE3 tOH2
VR/W
VD0~VD7
Signal EXT φ0 VCE
Parameter Clock cycle VCE high-level pulse width VCE low-level pulse width Read cycle time VCE address setup time (fall) VCE address hold time (fall) VCE read cycle setup time (fall) VCE read cycle hold time (fall) Address access time VCE access time Output data hold time VCE data off time
Symbol tC tW tCE tCYR tASC tAHC tRCS tRCH tACV tCEA tOH2 tCE3
VA0 to VA15
VR/W
VD0 to VD7
Rating Min Max 100 — tC – 40 — 2tC – 40 — *1 — tC – 45 — 2tC – 40 — tC – 45 — tC/2 – 35 — — *2 — *3 0 — 0 —
Unit ns ns ns ns ns ns ns ns ns ns ns ns
Remark
CL = 100 pF + 1TTL
*1. tCYR = 3tC
*2. tACV = 3tC – 120 *3. tCEA = 2tC – 120
131
SED1330
°
Display Memory WRITE Timing
tC
EXTφO
tW tCE
VCE
tASC tAHC tCA
VA0~VA15
tCYW tAS tWSC tWHC tAH2
VR/W
tOSC tOH2 tOHC
VD0~VD7
Signal EXT φ0 VCE
Parameter Clock cycle VCE HIGH-level pulse width VCE LOW-level pulse width Write cycle time VCE address hold time (fall) VCE address setup time (fall) VCE address hold time (rise) VR/W address setup time (fall) VR/W address hold time (rise) VCE write setup time (fall) VCE write hold time (fall) VCE data input setup time (fall) VCE data input hold time (fall) VR/W data hold time (rise)
Symbol tC tW tCE tCYW tAHC tASC tCA tAS tAH2 tWSC tWHC tDSC tDHC tDH2
VA0 to VA15
VR/W
Rating Min Max 100 — tC – 40 — 2tC – 40 — 3tC — 2tC – 40 — tC – 55 — 5 — 0 — 15 — tC – 55 — 2tC – 40 tWSC – 10 2tC – 30 10* — — — 50
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Remark
CL = 100 pF + 1TTL
VD0 to VD7
* Lines VD0 to VD7 are latched.
132
SED1330
°
LCD Control Timing
ROW NO LP YD WF YSCL
1 frame period
WF YSCL
ROW64
1 line period
ROW1
ROW2
LP XSCL XD0~XD3 XECL
tr tWX tf tCX
XSCL XD0~XD3
tDS
tDH
tWL tL1 tS2 tL2 tS1
LP XECL WF(B) YD
tWXE
tDf
YSCL
tLD tDHY tWY
133
SED1330
Signal EXT φ0 Parameter Clock cycle Rising time Falling time Shift clock cycle time XSCL clock pulse width X-data hold time X-data setup time Latch data setup time LP signal pulse width XECL setup time XECL data hold time Enable setup time Enable delay time XECL clock pulse width Time allowance of WF delay LP delay time against YSCL YSCL clock pulse width Y-data hold time Symbol tC tr tf tCX tWX tDH tDS tLS tWL tL1 tL2 tS1 tS1 tWXE tDF tLD tWY tDHY Rating Min 100 — — 4tC tCX2 – 80 tCX2 – 100 tCX2 – 100 tCX2 – 100 tCX4 – 80 tCX3 – 100 tC – 30 tC – 30 tC – 30 tCX3 – 80 — tCX4 – 100 tCX4 – 80 tCX6 – 100 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Remark
XSCL XD0 to XD3 LP
XECL
WF YSCL YD
Max — 35 35 — — — — — — — — — — — 100 — — —
VDD = 5.0V ± 10% CL = 150F
134
SED1330
°
Oscillator Timing
VDD
tOSP
CLO
tOSS
YDIS
Power ON Sleep period
tRCL
tFCL
EXT 0O
tWL tCL tWH
Signal
Parameter Time to stable CLO output after power-ON Time to stable CLO after sleep OFF External clock rise time External clock fall time External clock high-pulse width External clock low-pulse width External clock cycle
Symbol tOSP tOSS tRCL tFCL tWH tWL tCL
Min — —
Rating Max 3 1 15 15 *2 *2 —
Unit ms ms ns ns ns ns ns
Remark
CLO
RES = H 20 pF
EXT φ0
— — *1 *1 100
*1. (tC – tRCL – tFCL) × 475/1000 < tWH, tWL *2. (tC – tRCL – tFCL) × 525/1000 > tWH, tWL
135
SED1330
s EXAMPLE OF APPLICATION
8.0MHz XG A0 A1 to A7
MPU
XD
HC138
G1 A0 VA13 to VA15 VR/W VA0 to VA12 A B C
Y7 Y6
CS7 CS6
Y0
CS0
Chip Selector
CS
SED1330F
IORQ
VA12 A0 to A12 WE SRM2064 CS1 (RAM1) CS2 D0 to D7 OE A0 to A12 WE SRM2064 CS1 (RAM7) CS2 D0 to D7 OE A0 to A11 2732 (EXT.CG) D0 to D7 OE
D0 to D7 RD WR RESET RESET
D0 to D7 RD WR RES XD0 to XD3
CE
VD0 to VD7
XECL XSCL LP WF YDIS YD YSCL
YSCL DI YDIS FR LAF SPU
SCI7661 Poff X2
SED1190F
LCD
VL1 VL2 VL3 VL4 VL5
(Y Driver) FR EI
SED1180F
LP XSCL ECL D0 to D3
LP XSCL ECL D0 to D3
Vreg
(X Driver)
136
LP XSCL ECL D0 to D3
FR EI
SED1180F
FR EI
SED1180F
SED1330
s CHARACTER CODE TABLE (BUILT-IN CHARACTER GENERATOR)
0 2
Higher 4-bit (D4 to D7) of Character Code (Hexadecimal)
1
2
Lower 4-bit (D0 to D3) of Character Code (Hexadecimal) 3 4 5 6 7 8 9A B C D
E
F
3 4 5 6 7 A B C D 1
Note:
321 321 321 321
means all dots of 6 × 8 matrix are on.
137
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