GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse mit Linse GaAlAs Infrared Emitter in SMT Package with lens SFH 4289
Wesentliche Merkmale • • • • • • • • • TOPLED mit Linse GaAIAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (Ie = f [IF]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar SFH 4289 Gehäusegleich mit SFH 3219
Features • • • • • • • • • TOPLED with lens Very highly efficient GaAIAs-LED Good Linearity (Ie = f [IF]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel SFH 4289 same package as SFH 3219
Anwendungen • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser • Industrieelektronik • „Messen/Steuern/Regeln“ • Automobiltechnik • Sensorik • Alarm- und Sicherungssysteme • IR-Freiraumübertragung Typ Type Bestellnummer Ordering Code
Applications • • • • • • • Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission
Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED with lens
SFH 4289
on request
2001-10-09
1
SFH 4289
Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value – 40 … + 100 5 100 2.5 180 450 Einheit Unit °C V mA A mW K/W
Top; Tstg VR IF IFSM Ptot
Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block
≈ 200
K/W
2001-10-09
2
SFH 4289
Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 m A Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to10%, IF = 100 mA, RL = 50 Ω Kapazität, Capacitance VR = 0 V, f = 1 MHz Durchlaßspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom, Reverse current VR = 5 V Gesamtstrahlungsfluß, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe, Symbol Symbol λpeak Wert Value 880 Einheit Unit nm
∆λ
80
nm
ϕ
± 25 0.09 0.3 × 0.3 0.5
Grad deg. mm2 mm µs
A L×B L×W tr, tf
Co
15
pF
VF VF IR
1.5 (≤ 1.8) 3.0 (≤ 3.8) 0.01 (≤ 1)
V V µA
Φe
23
mW
TCI
– 0.5
%/K
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA
2001-10-09
TCV TCλ
–2 + 0.25
mV/K nm/K
3
SFH 4289
Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Symbol Iemin Ietyp Ie typ Werte Values 6.3 17 140 Einheit Unit mW/sr mW/sr mW/sr
2001-10-09
4
SFH 4289
Relative Spectral Emission Irel = f (λ)
100 Ι rel % 80
OHR00877
Radiant Intensity
Ιe = f (IF ) Ιe 100 mA
OHR00878
Single pulse, tp = 20 µs
10 2 Ιe Ι e (100mA) 10 1
Max. Permissible Forward Current IF = f (T A )
120
OHR00883
Ι F mA
100
80
60
10 0
R thjA = 450 K/W 60
40
10 -1
40
20
10 -2
20
0 750
10 -3
800
850
900
950 nm 1000 λ
10 0
10 1
10 2
10 3 mA 10 4 ΙF
0
0
20
40
60
80
100 ˚C 120 TA
IF = f (VF) single pulse, tp = 20 µs
10 1
OHR00881
Forward Current
Permissible Pulse Handling Capability IF = f (tp), TA = 25 °C duty cycle D = parameter
10 4 mA
OHR00886
Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us.
ΙF
A
ΙF
0
10
D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2
10 -1
0.5 10 2 DC tp
10 -2
D= tp T
ΙF
T
10 -3
0
1
2
3
4
5
6
V VF
8
10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0
10 1 s 10 2 tp
Radiation Characteristics Irel = f (ϕ)
40˚ 30˚ 20˚ 10˚
ϕ
0˚ 1.0
OHL00732
50˚ 0.8 60˚
0.6
70˚
0.4
80˚ 90˚
0.2 0
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
2001-10-09
5
SFH 4289
Maßzeichnung Package Outlines
3.5 (0.138) max. 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028)
ø2.60 (0.102) 1.1 (0.043) 0.5 (0.020)
0.6 (0.024) 0.4 (0.016) 0.1 (0.004) (typ.) 0.18 (0.007) 0.13 (0.005)
6
2 Package marking
GEOY6956
Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-10-09
ø2.55 (0.100)
3.4 (0.134) 3.0 (0.118)
3.7 (0.146) 3.3 (0.130)
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