SGA-2186

Product Description Stanford Microdevices’ SGA-2186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 20mA , the SGA-2186 typically provides +20 dBm output IP3, 10.2 dB of gain, and +7.5 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 12 10 Gain (dB) 8 6 4 2 0 1 2 3 Frequency (GHz) 4 5 ORL GAIN 0 -8 -16 -24 -32 -40 SGA-2186 DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • High Gain : 9.3 dB at 1950 MHz • Cascadable 50 Ohm • Patented SiGe Technology IRL Return Loss (dB) • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 1.9 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 9.2 Ty p. 10.2 9.3 8.9 7.5 6.7 20.0 19.6 5000 18.2 27.2 4.7 2.2 97 2.5 Max. 11.2 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = -10dBm) Bandw idth Determined by Return Loss (