SGA-5289

SGA-5289

  • 厂商:

    ETC

  • 封装:

  • 描述:

    SGA-5289 - DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
SGA-5289 数据手册
SGA-5289 Product Description The SGA-5289 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. SGA-5289Z Pb RoHS Compliant & Green Package DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS Product Features compliant per EU Directive 2002/95. This package is also manu- • Now available in Lead Free, RoHS factured with green molding compounds that contain no antimony Compliant, & Green Packaging trioxide nor halogenated fire retardants. i Gain & Return Loss vs. Frequency 20 15 Gain (dB) 10 5 0 0 1 VD= 3.5 V, ID= 60 mA (Typ.) 0 -10 -20 Return Loss (dB) • High Gain : 12.7 dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package GAIN ORL Applications • • • • PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite IRL -30 -40 2 3 4 Frequency (GHz) 5 6 Symbol G Parameter Small Signal Gain Units dB dB dB dBm dBm dBm dBm MHz dB dB dB V mA °C/W Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 12.1 Typ. 13.4 12.7 12.5 15.8 14.4 31.8 28.1 5000 Max. 14.7 P1dB OIP3 Output Pow er at 1dB Compression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 75 Ohms 1950 MHz 1950 MHz 1950 MHz 3.1 54 29.2 18.1 3.8 3.5 60 97 3.9 66 Test Conditions: ID = 60 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100616 Rev D SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 500 Frequency Frequency (MHz) Frequency (MHz)(MHz) 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dBm dBm dB dB dB dB 13.8 13.6 32.1 16.0 13.4 31.8 15.8 25.1 24.1 18.5 4.2 12.7 28.1 14.4 29.2 18.1 19.5 3.8 12.5 26.3 13.6 21.1 16.7 19.7 5.0 11.9 26.8 29.5 18.3 24.8 26.4 18.3 4.3 14.6 14.5 20.0 VS = 8 V Test Conditions: VS = 8 V Test Conditions: RBIAS = 75 Ohms RBIAS = 39 Ohms = 60 mA Typ. IID = 80 mA Typ. D T = 25ºC TLL = 25ºC OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Noise Figure vs. Frequency VD=3.5 V, ID= 60 mA (Typ.) 7 6 5 4 3 Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit 120 mA 5V +16 dBm +150°C -40°C to +85°C +150°C Noise Figure (dB) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. TL=+25ºC 2 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 40 35 OIP3 (dBm) P1dB (dBm) 30 25 20 18 16 14 12 P1dB vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) TL=+25ºC 20 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 TL=+25ºC 10 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100616 Rev. D SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 20 15 S21(dB) VD= 3.5 V, ID= 60 mA (Typ.) 0 -10 S11(dB) -20 -30 VD= 3.5 V, ID= 60 mA (Typ.) 10 5 TL 0 0 1 2 3 4 Frequency (GHz) 5 +25°C -40°C +85°C TL -40 6 0 1 2 3 4 Frequency (GHz) 5 +25°C -40°C +85°C 6 |S | vs. Frequency 12 |S | vs. Frequency 22 -12 -15 S12(dB) -18 -21 VD= 3.5 V, ID= 60 mA (Typ.) 0 -10 S22(dB) VD= 3.5 V, ID= 60 mA (Typ.) -20 -30 TL -24 0 1 2 3 4 Frequency (GHz) 5 +25°C -40°C +85°C TL -40 +25°C -40°C +85°C 6 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100616 Rev. D SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 4 1 SGA-5289 3 2 CB RF out Recommended Bias Resistor Values for ID=60mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 43 8V 75 10 V 110 12 V 150 VS RBIAS Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. A52 LC CD CB CB Part Identification Marking 4 4 Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. A52 2 3 A52Z 2 2, 4 GND 1 2 3 1 2 1 1 3 3 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 for Package Outline Drawing SGA-5289 SGA-5289Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100616 Rev. D
SGA-5289
物料型号: - SGA-5289 - SGA-5289Z

器件简介: SGA-5289是一款高性能的硅锗HBT MMIC放大器。它采用达林顿配置,具有1微米发射极,提供高FT(截止频率)和出色的热性能。异质结构增加了击穿电压并最小化了结之间的漏电流。发射极结非线性的抵消结果导致更高的互调抑制。

引脚分配: - Pin 1: RF IN,射频输入引脚。需要使用外部DC阻断电容器,并且需要根据工作频率进行选择。 - Pin 2 和 Pin 4: GND,接地引脚。建议使用通孔,以最佳性能减少引线电感,尽可能靠近地线引脚。 - Pin 3: RF OUT/BIAS,射频输出和偏置引脚。该引脚上存在DC电压,因此需要DC阻断电容器以确保正常工作。

参数特性: - 高增益:1950 MHz时为12.7 dB - 级联50欧姆 - 单电源操作 - 低热阻封装

功能详解: SGA-5289可用于多种应用,包括PA驱动放大器、蜂窝、PCS、GSM、UMTS、中频放大器、无线数据、卫星等。

应用信息: SGA-5289可以用于无线通信系统中的多种射频放大应用,包括但不限于移动通信、无线数据传输和卫星通信。

封装信息: PDF中提到了Sirenza的无铅封装,采用锡完成表面处理,并使用退火后处理以减少锡须形成,符合RoHS指令。封装材料不含三氧化锑和卤化阻燃剂。
SGA-5289 价格&库存

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