SGA-6286

Product Description Stanford Microdevices’ SGA-6286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 75mA , the SGA-6286 typically provides +35 dBm output IP3, 13.8 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 20 16 Gain (dB) SGA-6286 DC-5500 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • High Gain : 12.4 dB at 1950 MHz • Cascadable 50 Ohm • Patented SiGe Technology 0 Return Loss (dB) -8 ORL GAIN IRL 12 8 4 0 0.00 1.00 -16 -24 -32 -40 • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 3.6 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 12.5 Ty p. 13.8 12.4 11.2 19.0 18.5 35.0 33.0 5500 14.6 20.2 4.3 4.0 97 4.4 Max. 15.2 2.00 3.00 4.00 Frequency (GHz) 5.00 6.00 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = 0dBm) Bandw idth Determined by Return Loss (