SGA-6589

Product Description Stanford Microdevices’ SGA-6589 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-6589 requires only DC blocking and bypass capacitors for external components. SGA-6589 Preliminary DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block Small Signal Gain vs. Frequency 30 25 dB 20 15 10 0 1 2 3 4 5 Frequency GHz Parameters: Test C onditions: Z0 = 50 Ohms, ID = 80 mA, T = 25oC Output Power at 1dB C ompressi on Product Features • DC-4000 MHz Operation • Single Voltage Supply • High Output Intercept: +32.5dBm typ. at 850 MHz • High Output Power : 21.5 dBm typ. at 850 MHz • High Gain : 25.6 dB typ. at 850 MHz Applications • Oscillator Amplifiers • Final PA for Low Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers U nits Min. Ty p. 21.5 19.0 17.8 32.5 31.6 30.3 25.6 20.5 18.8 4000 1.60:1 1.80:1 28.7 24.3 22.9 2.9 4.8 97 Max. Sy mbol P 1dB f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m dB m dB m dB m dB dB dB MHz IP3 Thi rd Order Intercept Poi nt Power out per tone = 0 dBm S 21 Bandwi dth S11 S 22 S 12 NF VD Rth,j-l Small Si gnal Gai n (D etermi ned by S11, S22 Values) Input VSWR Output VSWR Reverse Isolati on Noi se Fi gure, ZS = 50 Ohms D evi ce Voltage Thermal Resi stance (juncti on - lead) f = D C -4000 MHz f = D C -4000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz dB dB dB dB V o C /W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l P arameter S upply C urrent Operati ng Temperature Maxi mum Input P ower S torage Temperature Range Operati ng Juncti on Temperature Value 160 -40 to +85 +10 -40 to +150 +150 U nit mA C dB m C C Key parameters, at typical operating frequencies: Parameter 500 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 850 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 1950 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 2400 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on Ty pical 25oC 27.4 2.5 32.1 21.6 13.8 29.9 25.6 2.5 32.5 21.5 15.7 28.7 20.5 2.9 31.6 19.0 14.0 24.3 18.8 3.3 30.3 17.8 12.5 22.9 U nit Test C ondition (ID = 80 mA, unless otherwise noted) dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Pin # 1 Function RF IN D escription D ev ice Schematic RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance. Place vi as as close to ground leads as possi ble. RF OUT/Vcc RF output and bi as pi n. Bi as should be suppli ed to thi s pi n through an external seri es resi stor and RF choke i nductor. Because D C bi asi ng i s present on thi s pi n, a D C blocki ng capaci tor should be used i n most appli cati ons (see appli cati on schemati c). The supply si de of the bi as network should be well bypassed. GND Same as Pi n 2. 2 3 4 Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) 6V 7.5V 9V 12V 1uF 68pF Rbias VS R bias 15 33 51 91 (Ohms) For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 50 ohm microstrip 33nH 2 1 100pF 3 4 100pF 50 ohm microstrip Application Schematic for Operation at 1950 MHz 1uF 22pF Rbias VS 22nH 50 ohm microstrip 2 1 68pF 3 4 68pF 50 ohm microstrip 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S21, ID =80mA, T=25C S12, ID =80mA, T=25C 30 25 dB 20 -15 -20 dB -25 15 10 0 1 2 3 4 5 Frequency GHz S11, ID =80mA, T=25C -30 -35 0 1 2 3 4 5 Frequency GHz S22, ID =80mA, T=25C 0 -5 dB 0 -5 dB -10 -15 -20 0 1 2 3 4 5 Frequency GHz -10 -15 -20 0 1 2 3 4 5 Frequency GHz S11, ID=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz S22, ID=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S21, ID =80mA, T=-40C S12, ID =80mA, T=-40C 30 25 dB -15 -20 dB 20 15 10 0 1 Frequency GHz S11, ID =80mA, T=-40C -25 -30 -35 2 3 4 5 0 1 Frequency GHz S22, ID =80mA, T=-40C 2 3 4 5 0 -5 dB dB 0 -5 -10 -15 -10 -15 -20 0 1 2 3 4 5 Frequency GHz 0 1 2 3 4 5 Frequency GHz S11, ID=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz S22, ID=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S21, ID =80mA, T=85C S12, ID =80mA, T=85C 30 25 dB -15 -20 dB 20 15 10 0 1 2 3 4 5 Frequency GHz S11, ID =80mA, T=85C -25 -30 -35 0 1 2 3 4 5 Frequency GHz S22, ID =80mA, T=85C 0 -5 dB 0 -5 dB -10 -15 -10 -15 -20 0 1 2 3 4 5 Frequency GHz -20 -25 0 1 2 3 4 5 Frequency GHz S11, ID=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz S22, ID=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Caution: ESD Sensitive Part Number Ordering Information Part N umber SGA-6589 R eel Siz e 13" D ev ices/R eel 3000 Appropriate precautions in handling, packaging and testing devices must be observed. Package Dimensions Outline Drawing 1 Part Symbolization The part will be symbolized with an “A65” designator on the top surface of the package. A65 2 4 3 PCB Pad Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Component Tape and Reel Packaging Tape Dimensions For 89 Outline D escription C avi ty Length Wi dth D epth P i tch B ottom Hole D i ameter D i ameter P i tch P osi ti on Wi dth Tape Thi ckness Wi dth Thi ckness C avi ty to P erforati on (Wi dth D i recti on) C avi ty to P erforati on (Length D i recti on) S y mbol A B K P1 D1 D0 P0 E C t W T F P2 S iz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 9.10 +/- 0.25 0.05 +/- 0.01 12.0 +/- 0.03 0.30 +/- 0.05 5.50 +/- 0.10 2.00 +/- 0.10 P erforati on C over Tape C arri er Tape D i stance 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-101268 Rev B