SGL-0163

Product Description Stanford Microdevices’ SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking and bypass capacitors for external components. This device has an internal temperature compensation circuit and can be operated directly from 3-4V supply. Small Signal Gain vs. Frequency 20 15 PPreliminary reliminary SGL-0163 800-1000 MHz Low Noise Amplifier 50 Ohm, Silicon Germanium 10 5 0 800 850 900 950 1000 3V,11mA 4V,25mA Product Features • Low Noise Figure • High Input Intercept • Internal Temp. Compensation Circuit • Internally Matched to 50 W • Unconditionally Stable • Low Power Consumption • Single Voltage Supply • Small Package: SOT-363 Applications • Receivers • Cellular, Fixed Wireless, Land Mobile U nits V cc = 3V Min. V cc = 3V Ty p. 5.0 6.4 13.5 15.0 1.1 1.8:1 1.7:1 20.6 8.0 11.0 255 14.0 16.5 V cc = 3V Max. V cc = 4V Ty p. 11.0 11.8 15.7 1.5 1.5:1 1.6:1 20.7 25.0 255 dB Frequency MHz Sy mbol P 1dB IIP3 S 21 NF S 12 ID Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, T = 25ºC Output Power at 1dB C ompressi on Input Thi rd Order Intercept Poi nt Tone spaci ng = 1 MHz Small Si gnal Gai n Noi se Fi gure, ZS = 50 Ohms Input VSWR Output VSWR Reverse Isolati on D evi ce C urrent Thermal Resi stance (juncti on - lead) f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz dB m dB m dB dB dB mA o C /W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101501 Rev A PPreliminary reliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l P arameter S upply C urrent Operati ng Temperature Maxi mum Input P ower Storage Temperature Range Operati ng Juncti on Temperature E S D voltage (Human B ody Model) Value 45 -40 to +85 10 -40 to +150 +150 400 U nit mA ºC dB m ºC ºC V Pin # 1 2 3 4 5 6 Function D escription N/C No C onnecti on. N/C No C onnecti on. RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc Supply connecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND C onnected to ground. For best performance use vi a holes as close to ground leads as possi ble. RF OUT RF output and D C supply. Thi s pi n VC C requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. D ev ice Schematic Vcc Bias ckt with temp. comp. RF Out / Vcc RF In Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (W) 3V, 11mA Rbias (W) 4V, 25mA 3V 0 4V 91 0 5V 180 39 6V 270 82 7.5V 430 130 Application Schematic 0.1µF 22pF Rbias Vs 22nH 50 Ohm microstrip 3 100pF 50 Ohm microstrip 6 100pF 4 5 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101501 Rev A Bias Voltage: 3V S21 vs. Frequency 25 -40C PPreliminary reliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier NF vs. Frequency 5 4.5 4 3.5 +25C +85C -40C +25C 85 20 15 dB dB 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 GHz S11 vs. Frequency 0 -40C +25C +85C GHz S22 vs. Frequency 0 -40C +25C +85C -5 -5 -10 -15 dB -10 -15 dB 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 GHz Typical S-Parameters including evaluation board @ T = 25ºC S 11 Freq GH z 0.05 0.10 0.20 0.40 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.40 1.60 1.80 2.00 3.00 4.00 5.00 dB -1.65 -1.53 -1.56 -3.78 -6.95 -8.39 -9.73 -10.98 -12.35 -12.93 -13.69 -14.65 -14.89 -14.93 -14.55 -13.78 -10.54 -9.66 An g -10.10 -21.04 -46.05 -94.95 -133.10 -149.91 -166.33 176.74 161.19 145.25 129.17 94.20 62.41 32.92 5.79 -98.28 167.77 43.52 dB 10.33 15.73 19.90 20.19 17.99 16.89 15.86 14.92 13.95 13.22 12.49 11.18 10.05 8.97 7.99 3.45 1.28 0.66 S 21 An g -113.20 -136.59 -179.32 113.44 68.94 51.21 35.23 20.19 5.93 -6.67 -19.64 -44.96 -69.31 -93.12 -116.42 132.95 38.56 -68.46 dB -57.01 -43.87 -34.97 -26.97 -23.59 -22.57 -21.42 -20.60 -19.97 -19.28 -18.65 -17.49 -16.61 -15.73 -15.11 -13.36 -11.59 -9.48 S 12 An g -159.32 151.51 116.17 68.69 36.36 22.87 10.59 -1.18 -13.73 -24.32 -35.19 -56.66 -78.17 -99.63 -120.88 136.24 45.79 -57.19 GHz S 22 dB -0.46 -0.66 -1.57 -4.98 -8.16 -9.40 -10.52 -11.55 -13.08 -13.78 -14.45 -16.14 -17.81 -19.40 -20.92 -20.92 -19.10 -19.70 An g 167.29 141.56 97.58 29.78 -15.35 -33.66 -50.18 -66.62 -82.02 -91.62 -105.95 -133.73 -161.98 169.38 139.03 -10.75 -132.43 109.26 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101501 Rev A Bias Voltage: 4V S21 vs. Frequency 30 -40C PPreliminary reliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier NF vs. Frequency 5 4.5 4 3.5 3 +25C +85C -40C +25C 85 25 20 dB 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 dB 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 GHz S11 vs. Frequency 0 -40C +25C +85C GHz S22 vs. Frequency 0 -40C +25C -5 -5 -10 -15 +85C dB -10 -15 dB 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 GHz Typical S-Parameters including evaluation board @ T = 25ºC S 11 Freq GH z 0.05 0.10 0.20 0.40 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.40 1.60 1.80 2.00 3.00 4.00 5.00 dB -2.92 -2.70 -2.99 -5.89 -9.23 -10.80 -12.27 -13.74 -15.40 -16.01 -16.97 -18.21 -18.61 -18.63 -17.83 -16.16 -11.67 -10.59 An g -9.82 -21.07 -47.78 -93.30 -127.00 -142.17 -157.37 -173.18 173.72 157.95 140.99 105.07 69.18 37.53 8.83 -91.56 174.62 46.68 dB 14.77 19.88 23.03 21.61 18.96 17.77 16.71 15.74 14.73 13.98 13.24 11.96 10.81 9.70 8.73 4.14 1.90 1.36 S 21 An g -117.69 -145.20 166.72 101.88 61.46 45.17 30.14 15.93 2.28 -9.74 -22.31 -46.63 -70.42 -93.66 -116.57 133.65 40.37 -66.52 dB -53.54 -47.07 -36.16 -27.73 -23.92 -22.81 -21.62 -20.65 -19.80 -19.18 -18.40 -17.18 -16.19 -15.42 -14.77 -13.07 -11.41 -9.32 S 12 An g -168.24 144.73 112.72 73.01 41.45 28.77 16.21 2.77 -9.68 -20.32 -31.19 -54.02 -75.95 -97.56 -119.57 135.52 45.11 -59.16 GHz S 22 dB -0.47 -0.72 -2.08 -5.97 -9.22 -10.36 -11.55 -12.54 -14.27 -14.92 -15.57 -17.56 -19.69 -21.78 -24.06 -23.01 -19.80 -20.12 An g 167.24 141.30 97.31 35.05 -6.88 -24.66 -40.64 -57.27 -71.95 -81.26 -95.79 -123.51 -150.83 179.48 149.53 -11.64 -138.02 98.21 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101501 Rev A PPreliminary reliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 6 5 4 Pin D esignation 1 N/C N/C RF i n V cc GND RF out / Vcc Note: Pin 1 is on lower left when you can read package marking L3 1 2 3 Package Dimensions 1.30 (0.051) REF. 2 3 4 5 6 Pad Layout 0.026 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.016 0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101501 Rev A PPreliminary reliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Evaluation Board layout Suggested Components Manufacture Rohm Rohm Rohm TOK O P art N umber MC H185A 200JK MC H185A 101JK MC H182FN104ZK LL1608-FH22NJ D escription C apaci tor C apaci tor C apaci tor Inductor The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC L3 Value 22 pF 100 pF 0.1 uF 22 nH 6 http://www.stanfordmicro.com EDS-101501 Rev A