SPA-2118

Product Description Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-2118 850 MHz 1 Watt Power Amplifier with Active Bias Product Features • High Linearity Performance: +20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3 VC1 VBIAS RFIN VPC2 Active Bias RFOUT/ VC2 • On-chip Active Bias Control • High Gain: 33 dB Typ. • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • IS-95 CDMA Systems • Multi-Carrier Applications • AMPS, ISM Applications Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF ICC VCC Rth j-l Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power IS-95 @880 MHz, ±885 KHz offset, POUT=20.7 dBm Small Signal Gain, 880 MHz Input VSWR Output Third Order Intercept Point Power out per tone = +14 dBm Noise Figure Device Current IBIAS = 10mA, IC1 = 70mA, IC2 = 320mA Units MHz dB m dB c dB dB m dB mA V ºC/W Min. 810 Typ. 900 29.0 -55.0 Max. 960 -52.0 34.5 31.5 33.0 1.5:1 47.0 5.0 360 4.75 400 5.0 31 425 5.25 Device Voltage Thermal Resistance (junction - lead), TL = 85ºC The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power -40.0 -45.0 -50.0 -55.0 dBc -40C 25C 85C -60.0 -65.0 -70.0 -75.0 -80.0 -85.0 11 12 13 14 15 16 17 18 Power (dBm) 22 Channel Output 19 20 21 dBm 23 24 25 IS-95 CDMA at 880 MHz T=+25C +24 dBm +20 dBm +10 dBm +16 dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data, ICC=400mA, VCC=5V Input/Output Return Loss, Isolation vs Frequency S22 0 -10 -20 dB T=+25°C 40 36 Gain vs. Frequency -40C 25C 85C S11 dB 32 28 -30 -40 -50 0.8 0.85 0.9 GHz S12 24 0.95 1 0.8 0.85 0.9 GHz 0.95 1 P1dB vs Frequency Device Current vs. Source Voltage 600 36 34 32 dBm Device Current (mA) -40C 25C 85C 500 400 300 200 100 0 25C -40C 85C 30 28 26 0.8 0.85 0.9 GHz 0.95 1 0 1 2 3 4 5 6 Vcc (V) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850 - 950 MHz Schematic External Connection 82pF Z=63 Ω , 9.5° Vcc 10uF Tantalum 1000pF IC2 2.2nH 6.8K IC1 IBIAS 1 2 3 4 8 7 6 5 39pF 33 nH Z=50 Ω , 15.1° 15pF 1200pF 330 Ohm Vpc 6.8pF 100pF 850 - 950 MHz Evaluation Board Layout Vcc C3 Ref. Des. C1 C2 Value 15pF, 5% 82pF, 5% 10uF, 10% 1000pF, 5% 39pF, 5% 1200pF, 5% 6.8pF, ±0.5pF 100pF, 5% 2.2nH, ±0.3nH 33nH, 5% 6.8K Ohm, 5% 330 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Coilcraft 1008HQ series Rohm MCR03 series Rohm MCR03 series C4 C2 L1 C1 R1 2012 C3 C4 C5 L2 C8 C6 R2 C7 C5 C6 C7 C8 L1 L2 Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board R1 R2 Vpc 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. Pin # 1 2 3 4 5, 6, 7, 8 Function V c1 V bi as RF In V p c2 RF Out/Vc2 Description VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. Vpc2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6). EPAD Gnd Simplified Device Schematic 2 4 2 1 ACTIVE BIAS NETWORK 5-8 ACTIVE BIAS NETWORK Absolute Maximum Ratings 3 Parameter (Ta = 25ºC) Max. Supply Current (IC1) at VCC typ. Max. Supply Current (IC2) at VCC typ. Max. Device Voltage (VCC) at Icc typ. Max. RF Input Power Absolute Limit 150 mA 750 mA 6.0 V 10 dB m +160 ºC +150 ºC Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices. Max. Junction Temp. (TJ) Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. Part Number Ordering Information Part Number SPA-2118 Devices Per Reel 500 Reel Siz e 7" Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) 8 7 6 5 .194 [4.93] EXPOSED PAD .236 [5.994] .155 [3.937] Lot ID SPA 2118 1 2 3 .045 [1.143] .035 [.889] 4 Beveled Edge TOP VIEW BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .008 [.203] .058 [1.473] .013 [.33] x 45° .008 .194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A .155 [3.937] END VIEW Recommended Land Pattern PARTING LINE 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) .025 0.140 [3.56] 0.300 [7.62] 5° DETAIL A Machine Screws 0.080 [2.03] Note: DIMENSIONS ARE IN INCHES [MM] 0.050 [1.27] 0.020 [0.51] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-102012 Rev F