SSM01N60J

SSM01N60H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating Repetitive-avalanche rated Fast switching Simple drive requirement G D BVDSS R DS(ON) ID 600V 8Ω 1.6A S Description The SSM01N60H is supplied in the industry-standard TO-252 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for AC/DC converters. The through-hole version (SSM01N60J) is available for low-footprint applications. GD S TO-252 (H) G DS TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 1.6 1 6 39 0.31 2 Units V V A A A W W/ °C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 13 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Unit °C/W °C/W Rev.2.02 4/06/2004 www.SiliconStandard.com 1 of 6 SSM01N60H,J Electrical Characteristics @ T j=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 5 14 7 286 25 6 Max. Units 8 4 10 100 ±100 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BVDSS/∆Τj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=10V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10Ω ,VGS=10V RD=187.5Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 1.6 6 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25°C, IS=1.6A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse width