Preliminary
SemiWell Semiconductor
TN815R
Symbol
3. Gate
○ ○
Silicon Controlled Rectifiers
▼
1 2 3
Features
Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type
◆
○
2. Anode
1. Cathode
D-PAK
General Description
2
Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 109 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 5 8 73 26.6 50 5 1 2 5.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A A2 s A/㎲ W W A V °C °C
Apr, 2004. Rev.0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
TN815R
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 16 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger Current (2) TC = 25 °C ─ ─ 15 mA tp=380㎲ ─ ─ ─ ─ ─ ─ 10 200 1.6 ( TC = 25 °C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
㎂
VTM
V
VD = 6 V(DC), RL=10 Ω VGT Gate Trigger Voltage (2) TC = 25 °C ─ ─ 1.5 V
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage
VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2 200
─ ─
─ ─
V
Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open
V/㎲
IH
Holding Current
TC = 25 °C
─
─
20
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient
─ ─
─ ─
2.0 70
°C/W °C/W
※ Notes : 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement.
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TN815R
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
160
10
1
PGM(5W)
Max. Allowable Case Temperature [ C]
VGM(5V)
o
140
Gate Voltage [V]
120
θ = 180
o
PG(AV)(1W) IGM(2A)
10
0
100
25 C
o
π
80
2π
θ
360°
60
VGD(0.2V)
10
-1
θ
: Conduction Angl e
40 0 1 2 3 4 5 6
10
-1
10
0
10
1
10
2
10
3
Gate Current [mA]
Average On-State Current [A]
Fi g 3. Typi cal Forward Voltage
10
2
Fi g 4. Th ermal R esponse
10
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
1
10
1
125 C
o
0.1
25 C
o
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 -4 10
10
-3
10
-2
10
-1
10
0
10
1
10
2
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fi g 6. Typi cal Gate Tri gger Current vs. Junction Temperature
VGT(25oC)
IGT(25 C)
VGT(t C)
IGT(t C)
o
o
1
1
o
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
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TN815R
Fi g 7. Typi cal Ho ldi ng C urrent
10
9 θ = 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
8 θ = 120 7 6 θ = 60 5 θ = 30 4 3 2 1 0
o o o
θ = 90
o
IH(25oC)
IH(t C)
o
1
0.1 -50
0
50
100
o
150
0
1
2
3
4
5
6
Junction Temperature[ C]
Average On-State Current [A]
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TN815R
TO-252(D-PAK) Package Dimension mm Min. 6.48 5.0 7.42 2.184 0.762 1.016 Typ. 6.604 5.08 7.8 2.286 0.813 1.067 2.286 2.286 0.534 1.016 0.61 1.067 0.508 0.762 1.57 0.686 1.118 0.021 0.04 Max. 6.73 5.21 8.18 2.388 0.864 1.118 Min. 0.255 0.197 0.292 0.086 0.03 0.04 Inch Typ. 0.26 0.2 0.307 0.09 0.032 0.042 0.09 0.09 0.024 0.042 0.02 0.03 0.06 0.027 0.044 Max. 0.265 0.205 0.322 0.094 0.034 0.044
Dim. A B C D E F G H I J K L
φ
A B
D E
φ
C I 2 1 G 3 H J
F
K
L
1. Cathode 2. Anode 3. Gate
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