UT621024LC-70LL

 UTRON Rev. 1.5 FEATURES Access time : 35/55/70ns (max.) Low power consumption : Operating : 60/50/40 mA (typical) Standby : 2µA (typical) L-version 1µA (typical) LL-version Single 5V power supply All inputs and outputs TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) Package : 32-pin 600 mil PDIP 32-pin 450 mil SOP 32-pin 8mmx20mm TSOP-1 32-pin 8mmx13.4mm STSOP UT621024 128K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT621024 is designed for low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT621024 operates from a single 5V power supply and all inputs and outputs are fully TTL compatible. PIN CONFIGURATION NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 CE2 WE FUNCTIONAL BLOCK DIAGRAM A16 A15 A13 A14 A12 A7 A6 A5 A4 A8 ROW DECODER A16 A14 A12 . MEMORY ARRAY VCC A7 A6 A5 A4 A3 A13 A8 A9 A11 OE UT621024 . . 1024 ROWS × 1024 COLUMNS VSS A2 A1 A0 I/O1 I/O2 A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 . I/O1 . . I/O8 . . I/O3 Vss . . . . I/O CONTROL . . . COLUMN I/O COLUMN DECODER A11 PDIP / SOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 CE 1 CE2 WE OE LOGIC CONTROL OE A10 A10 A11 A9 A3 A2 A1 A0 A9 A8 A13 CE 1 I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3 WE PIN DESCRIPTION SYMBOL A0 - A16 I/O1 - I/O8 CE1 ,CE2 WE OE VCC VSS NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip enable 1,2 Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection CE2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4 UT621024 25 24 23 22 21 20 19 18 17 TSOP-I/STSOP ________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1  UTRON Rev. 1.5 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder UT621024 128K X 8 BIT LOW POWER CMOS SRAM RATING -0.5 to +7.0 0 to +70 -65 to +150 1 50 260 UNIT V ℃ ℃ W mA ℃ *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Standby Output Disable Read Write CE1 H X L L L CE2 X L H H H OE X X H L X WE X X H H L I/O OPERATION High - Z High -Z High - Z DOUT DIN SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC ICC ICC Note: H = VIH, L=VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10%, TA = 0℃ to 70℃) PARAMETER SYMBOL TEST CONDITION Input High Voltage VIH Input Low Voltage VIL Input Leakage Current IIL VSS ≦VIN ≦VCC Output Leakage Current IOL VSS ≦VI/O≦VCC CE1 =VIH or CE2 = VIL or Output High Voltage Output Low Voltage Average Operating Power Supply Courrent VOH VOL ICC MIN. TYP. MAX. 2.2 - 0.5 -1 -1 60 50 40 2 1 VCC+0.5 0.8 1 1 0.4 100 85 70 10 3 100 40* 50 15* UNIT V V µA µA V V mA mA mA mA mA µA µA ICC1 OE = VIH or WE = VIL IOH = - 1mA 2.4 IOL= 4mA Cycle time=min, 100% duty, -35 -55 CE1 =VIL, CE2 = VIH, II/O = 0mA -70 Cycle time=1µs,100% duty,II/O=0mA . CE1 ≦0.2V,CE2≧VCC-0.2V, other pins at 0.2V or VCC-0.2V, CE1 =VIH or CE2 = VIL other pins at 0.2V or VCC-0.2V, CE1 ≧VCC-0.2V or -L .CE2≦0.2V other pins at 0.2V or VCC-0.2V, LL - Standby Power Supply Current ISB ISB1 *Those parameters are for reference only under 50℃ ________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2  UTRON Rev. 1.5 CAPACITANCE (TA=25℃, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. UT621024 128K X 8 BIT LOW POWER CMOS SRAM - MAX. 8 10 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL=100pF, IOH/IOL=-1mA/4mA AC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10% , TA = 0℃ to 70℃) (1) READ CYCLE PARAMETER UT621024-35 UT621024-55 UT621024-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 35 55 70 ns Address Access Time tAA 35 55 70 ns Chip Enable Access Time tACE1, tACE2 35 55 70 ns Output Enable Access Time tOE 25 30 35 ns Chip Enable to Output in Low-Z tCLZ1*, tCLZ2* 10 10 10 ns Output Enable to Output in Low-Z tOLZ* 5 5 5 ns Chip Disable to Output in High-Z tCHZ1*, tCHZ2* 25 30 35 ns Output Disable to Output in High-Z tOHZ* 25 30 35 ns Output Hold from Address Change tOH 5 5 5 ns SYMBOL (2) WRITE CYCLE PARAMETER SYMBOL Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write-Time Output Active from End of Write Write to Output in High-Z tWC tAW tCW1, tCW2 tAS tWP tWR tDW tDH tOW* tWHZ* UT621024UT621024-70 UNIT UT621024-55 35 MIN. MAX. MIN. MAX. MIN. MAX. 35 55 70 ns 30 50 60 ns 30 50 60 ns 0 0 0 ns 25 40 45 ns 0 0 0 ns 20 25 30 ns 0 0 0 ns 5 5 5 ns 15 20 25 ns *These parameters are guaranteed by device characterization, but not production tested. _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3  UTRON Rev. 1.5 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2,4) tRC UT621024 128K X 8 BIT LOW POWER CMOS SRAM Address tAA tOH tOH DOUT Data Valid READ CYCLE 2 ( CE1 , CE2 and OE Controlled) (1,3,5,6) tRC Address tAA CE1 tACE1 CE2 tACE2 OE tOE tCLZ1 tCLZ2 High-Z DOUT tOLZ tCHZ1 tCHZ2 tOHZ tOH Data Valid High-Z Notes : 1. WE is HIGH for read cycle. 2. Device is continuously selected CE1 =VIL and CE2=VIH. 3. Address must be valid prior to or coincident with CE1 and CE2 transition; otherwise tAA is the limiting parameter. 4. OE is low. 5. tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2 and tOHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. 6. At any given temperature and voltage condition, tCHZ1 is less than tCLZ1, tCHZ2 is less than tCLZ2, tOHZ is less than tOLZ. _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4  UTRON Rev. 1.5 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5) tWC Address CE1 UT621024 128K X 8 BIT LOW POWER CMOS SRAM tAW tCW1 CE2 tCW2 tAS tWP tWR WE tWHZ High-Z tOW (4) tDW tDH DOUT (4) DIN Data Valid WRITE CYCLE 2 ( CE1 and CE2 Controlled) (1,2,5) tWC Address tAW CE1 tAS tCW1 tCW2 tWR CE2 tWP WE tWHZ High-Z DOUT (4) tDW tDH DIN Data Valid Notes : 1. WE or CE1 must be HIGH or CE2 must be LOW during all address transitions. 2. A write occurs during the overlap of a low CE1 , a high CE2 and a low WE . 3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the I/O drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input singals must not be applied. 5. If the CE1 LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a high impedance state. 6. tOW and tWHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5  UTRON Rev. 1.5 DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃) PARAMETER Vcc for Data Retention Data Retention Current SYMBOL TEST CONDITION VDR CE1 ≧ VCC-0.2V or CE2 ≤ 0.2V IDR Vcc=3V CE1 ≧ VCC-0.2V or CE2 ≤ 0.2V See Data Retention Waveforms (below) UT621024 128K X 8 BIT LOW POWER CMOS SRAM MIN. TYP. MAX. 2.0 -L - LL 0 tRC* 1 0.5 40 20* 20 10* - UNIT V µA µA ns ns Chip Disable to Data Retention Time Recovery Time tCDR tR tRC* = Read Cycle Time *Those parameters are for reference only under 50℃ DATA RETENTION WAVEFORM Date Retention Mode VCC 4.5V tCDR VDR ≧ 2.0V 4.5V tR VIH CE1 ≧ VCC -0.2V CE1 VSS CE2 VIH VIL CE2 ≤ 0.2V VIL _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6  UTRON Rev. 1.5 PACKAGE OUTLINE DIMENSION 32 pin 600 mil PDIP Package Outline Dimension UT621024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL A A A1 A2 B B1 c D E E1 e eB L S Q1 INCH(BASE) 0.010 (MIN) 0.150 ± 0.005 0.018 ± 0.005 0.050 ± 0.005 0.010± 0.004 1.650 ± 0.005 0.600 ± 0.010 0.544 ± 0.004 0.100(TYP) 0.640 ± 0.020 0.130 ± 0.010 0.075 ± 0.010 0.070± 0.005 MM(REF) 0.254 (MIN) 3.810 ± 0.127 0.457 ± 0.127 1.270 ± 0.127 0.254± 0.102 41.910 ± 0.127 15.240 ± 0.254 13.818 ± 0.102 2.540(TYP) 16.256 ± 0.508 3.302 ± 0.254 1.905± 0.254 1.778± 0.127 Note: 1. D/E1/S DIMENSION DO NOT INCLUDE MOLD FLASH. _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7  UTRON Rev. 1.5 32 pin 450mil SOP Package Outline Dimension UT621024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL A A1 A2 b c D E E1 e L L1 S y Θ A A C INCH(BASE) 0.118 (MAX) 0.004(MIN) 0.111(MAX) 0.015(MIN) 0.020(MAX) 0.008(TYP) 0.817(MAX) 0.445 ± 0.005 0.555 ± 0.005 0.050(TYP) 0.0347 ± 0.008 0.055 ± 0.008 0.026(MAX) 0.004(MAX) o o 0 -10 MM(REF) 2.997 (MAX) 0.102(MIN) 2.82(MAX) 0.38(MIN) 0.50(MAX) 0.203(TYP) 20.75(MAX) 11.303 ± 0.127 14.097 ± 0.127 1.270(TYP) 0.881 ± 0.203 1.397 ± 0.203 0.660 (MAX) 0.101(MAX) o o 0 -10 _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8  UTRON Rev. 1.5 32 pin TSOP-I Package Outline Dimension UT621024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL C A A1 A2 b c D E e HD L L1 y Θ E C H B INCH(BASE) 0.047 (MAX) 0.004 ± 0.002 0.039 ± 0.002 0.008 + 0.002 - 0.001 0.005 (TYP) 0.724 ± 0.004 0.315 ± 0.004 0.020 (TYP) 0.787 ± 0.008 0.0197 ± 0.004 0.0315 ± 0.004 0.003 (MAX) o o 0 〜5 MM(REF) 1.20 (MAX) 0.10 ± 0.05 1.00 ± 0.05 0.20 + 0.05 -0.03 0.127 (TYP) 18.40 ± 0.10 8.00 ± 0.10 0.50 (TYP) 20.00 ± 0.20 0.50 ± 0.10 0.08 ± 0.10 0.076 (MAX) o o 0 〜5 _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9  UTRON Rev. 1.5 32 pin 8mm x 13.4mm STSOP Package Outline Dimension UT621024 128K X 8 BIT LOW POWER CMOS SRAM Uni t Symbol A A1 A2 b c D Db E e L L1 y e MM(REF) 1.20(Max.) 0.10±0.05 1.00±0.05 020(TYP.) 0.15(TYP.) 13.40±0.20 11.80±0.10 8.000±0.10 0.50(TYP.) 0.50±0.10 0.80±0.10 0.08(Max.) 0 ~5 INCH(BASE) 0.047(Max). 0.004±0.002 0.039±0.002 0.006(TYP.) 0.006(TYP.) 0.526±0.006 0.465±0.004 0.315±0.004 0.020(TYP.) 0.020±0.004 0.0315±0.004 0.003(Max.) 0 ~5 Note： 1.E dinmension is not including end flash. 2.The total of both sides’ end flash Is not above 0.3mm. ________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10  UTRON Rev. 1.5 ORDERING INFORMATION PART NO. UT621024PC-35L UT621024PC-35LL UT621024SC-35L UT621024SC-35LL UT621024LC-35L UT621024LC-35LL UT621024LS-35L UT621024LS-35LL UT621024PC-55L UT621024PC-55LL UT621024SC-55L UT621024SC-55LL UT621024LC-55L UT621024LC-55LL UT621024LS-55L UT621024LS-55LL UT621024PC-70L UT621024PC-70LL UT621024SC-70L UT621024SC-70LL UT621024LC-70L UT621024LC-70LL UT621024LS-70L UT621024LS-70LL ACCESS TIME (ns) 35 35 35 35 35 35 35 35 55 55 55 55 55 55 55 55 70 70 70 70 70 70 70 70 STANDBY CURRENT (µA) 100 50 100 50 100 50 100 50 100 50 100 50 100 50 100 50 100 50 100 50 100 50 100 50 UT621024 128K X 8 BIT LOW POWER CMOS SRAM PACKAGE 32 PIN PDIP 32 PIN PDIP 32 PIN SOP 32 PIN SOP 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN STSOP 32 PIN STSOP 32 PIN PDIP 32 PIN PDIP 32 PIN SOP 32 PIN SOP 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN STSOP 32 PIN STSOP 32 PIN PDIP 32 PIN PDIP 32 PIN SOP 32 PIN SOP 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN STSOP 32 PIN STSOP _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 11  UTRON Rev. 1.5 REVISION HISTORY REVISION REV. 1.0 REV. 1.1 REV. 1.2 REV. 1.3 REV. 1.4 REV. 1.5 DESCRIPTION Original. NA NA Add STSOP-I Package Modify the format of power consumption 1. Operating : 60/40 -> 60/50/40 2. Standby Current : 10 ->2 (L-version) 3. Add ICC–data as (-55, TYP 50, MAX 85) 4. Revise ISB1 TYP : 10-> 2, MAX : 300/100 ->100/40 5. The symbols CE1# ,OE# & WE# are revised as CE1 , OE & WE UT621024 128K X 8 BIT LOW POWER CMOS SRAM DATE Apr. 05 2000 --Aug. 29.2000 Sep. 01.2000 Jun. 18,2001 _________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80036 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 12