WSF128K16-72H1I

WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES n n n Access Times of 35ns (SRAM) and 70ns (FLASH) n Access Times of 70ns (SRAM) and 120ns (FLASH) n Packaging • 66-pin, PGA Type, 1.075 inch square HIP, Hermetic Ceramic HIP (Package 400) • 66-pin, PGA Type, 1.185 inch square HIP, Hermetic Ceramic HIP (Package 401) • 68 lead, Hermetic CQFP (G1U), 22.4mm (0.880 inch) square (Package 519). Designed to fit JEDEC 68 lead 0.990” CQFJ footprint (Fig. 2) n 128Kx16 SRAM n 128Kx16 5V FLASH n Organized as 128Kx16 of SRAM and 128Kx16 of Flash Memory with separate Data Buses n Both blocks of memory are User Configurable as 256Kx8 n Low Power CMOS n Commercial, Industrial and Military Temperature Ranges n TTL Compatible Inputs and Outputs n n n n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight • WSF128K16-XHX - 13 grams typical • WSF128K16-H1X - 13 grams typical • WSF128K16-XG1UX - 5 grams typical FLASH MEMORY FEATURES n n 10,000 Erase/Program Cycles Sector Architecture • 8 equal size sectors of 16K bytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase 5 Volt Programming; 5V ± 10% Supply Embedded Erase and Program Algorithms Hardware Write Protection Page Program Operation and Internal Program Control Time. Note: For programming information refer to Flash Programming 1M5 Application Note. FIG.1 PIN CONFIGURATION FOR WSF128K16-XHX AND WSF128K16-XH1X TOP VIEW FD0-15 SD0-15 A 0-16 SWE1-2 SCS1-2 OE VCC GND NC FWE1-2 FCS1-2 PIN DESCRIPTION Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select BLOCK DIAGRAM May 2001 Rev. 5 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX FIG. 2 PIN CONFIGURATION FOR WSF128K16-XG1UX TOP VIEW FD 0-15 SD0-15 A 0-16 SWE1-2 SCS1-2 OE PIN DESCRIPTION Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select The WEDC 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form. VCC GND NC FWE1-2 FCS1-2 BLOCK DIAGRAM White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 WSF128K16-XXX ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit SCS OE SRAM TRUTH TABLE SWE Mode Data I/O Power Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage TA T STG VG TJ VCC -55 -65 -0.5 -0.5 +125 +150 7.0 150 7.0 °C °C V °C V H L L L X L H X X H H L Standby Read Read Write High Z Data Out High Z Data In Standby Active Active Active Parameter CAPACITANCE (TA = +25°C) 10 years 10,000 Test Symbol Condition Max Unit Flash Data Retention Flash Endurance (write/erase cycles) NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. OE Capacitance F/S WE 1-2 Capacitance F/S CS 1-2 Capacitance SD0-15/FD0-15 Capacitance A0 - A16 Capacitance COE C WE C CS CI / O C AD V IN = 0V, f = 1.0MHz 50 V IN = 0V, f = 1.0MHz 20 V IN = 0V, f = 1.0MHz 20 V IN = 0V, f = 1.0MHz 20 V IN = 0V, f = 1.0MHz 50 pF pF pF pF pF RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit This parameter is guaranteed by design but not tested. Supply Voltage Input High Voltage Input Low Voltage V CC VIH V IL 4.5 2.2 -0.5 5.5 V CC + 0.3 +0.8 V V V DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C) Parameter Symbol Conditions Min Max Unit Input Leakage Current Output Leakage Current SRAM Operating Supply Current x 16 Mode Standby Current SRAM Output Low Voltage SRAM Output High Voltage Flash V CC A ctive Current for Read (1) Flash V CC A ctive Current for Program or Erase (2) Flash Output Low Voltage Flash Output High Voltage Flash Output High Voltage Flash Low V CC L ock Out Voltage ILI ILO I CCx16 I SB V OL VOH ICC1 ICC2 V OL V OH1 V OH2 V LKO V CC = 5.5, V IN = GND to VCC SCS = VIH, OE = VIH, VOUT = GND to VCC SCS = VIL, OE = FCS = VIH, f = 5MHz, V CC = 5 .5 FCS = SCS = VIH, OE = VIH, f = 5MHz, V CC = 5 .5 I OL = 2 .1mA, V CC = 4 .5 I OH = - 1.0mA, V CC = 4 .5 FCS = VIL, OE = SCS = VIH FCS = VIL, OE = SCS = VIH I OL = 8 .0mA, V CC = 4 .5 I OH = - 2.5 mA, V CC = 4 .5 I OH = - 100 µA, V CC = 4 .5 0.85 x V CC V CC - 0.4 3.2 2.4 10 10 360 40 0.4 µA µA mA mA V V 100 130 0.45 mA mA V V V V NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX SRAM AC CHARACTERISTICS (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Read Cycle Symbol -35 Min Max -70 Min Max Unit SRAM AC CHARACTERISTICS (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Write Cycle Symbol -35 Min Max -70 Unit Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z t RC t AA tOH t ACS tOE t CLZ 1 t OLZ 1 t CHZ 1 t OHZ 1 35 35 0 35 20 3 0 20 20 70 70 3 70 35 3 0 25 25 ns ns ns ns ns ns ns ns ns Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold from Write Time t WC tCW t AW t DW t WP t AS t AH t OW 1 t WHZ 1 tDH 35 25 25 20 25 0 0 4 20 0 70 60 60 30 50 5 5 5 25 0 ns ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. 1. This parameter is guaranteed by design but not tested. FIG. 3 AC TEST C IRCUIT Parameter AC TEST C ONDITIONS Typ Unit Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level VIL = 0, VIH = 3.0 5 1.5 1.5 V ns V V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 4 WSF128K16-XXX FIG. 4 SRAM T IMING W AVEFORM - READ CYCLE FIG. 5 SRAM WRITE CYCLE - SWE CONTROLLED FIG. 6 SRAM W RITE CYCLE - SCS CONTROLLED WS32K32-XHX 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX FL ASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE CONTROLLED (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol Min -70 Max Min -120 Max Unit Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (min) Chip and Sector Erase Time Read Recovery Time Before Write VCC Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (1) t AVAV tELWL t WLWH tAVWL t DVWH t WHDX tWLAX t WHEH t WHWL t WHWH1 t WHWH2 t GHWL t WC tCS t WP t AS tDS tDH t AH t CH t WPH 70 0 35 0 30 0 45 0 20 14 2.2 0 60 120 0 50 0 50 0 50 0 20 14 2.2 0 50 12.5 12.5 0 10 60 ns ns ns ns ns ns ns ns ns µs sec µs µs sec ns ns t VCS tOES tOEH 50 0 10 1. For Toggle and Data Polling. FL ASH AC CHARACTERISTICS – READ ONLY OPERATIONS (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol Min Max -70 Min Max -120 Unit Read Cycle Time Address Access Time Chip Select Access Time OE to Output Valid Chip Select to Output High Z (1) OE High to Output High Z (1) Output Hold from Address, CS or OE Change, whichever is first t AVAV t AVQV t ELQV t GLQV t EHQZ t GHQZ t AXQX t RC t ACC t CE tOE t DF t DF tOH 70 70 70 35 20 20 0 120 120 120 50 30 30 0 ns ns ns ns ns ns ns 1. Guaranteed by design, not tested. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 6 WSF128K16-XXX FL ASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS CONTROLLED (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol Min -70 Max Min -120 Max Unit Write Cycle Time FWE Setup Time FCS Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time FWE Hold from FWE High FCS Pulse Width High Duration of Programming Operation Duration of Erase Operation Read Recovery before Write Chip Programming Time t AVAV tWLEL t ELEH t AVEL tDVEH t EHDX tELAX t EHWH tEHEL t WHWH1 t WHWH2 t GHEL t WC t WS t CP t AS tDS tDH t AH t WH tCPH 70 0 35 0 30 0 45 0 20 14 2.2 0 12.5 60 120 0 50 0 50 0 50 0 20 14 2.2 0 12.5 60 ns ns ns ns ns ns ns ns ns µs sec ns sec 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX FIG. 7 AC WAVEFORMS FOR F L ASH MEMORY READ OPERATIONS White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 8 WSF128K16-XXX FIG. 8 WRITE/ERASE/PROGRAM OPERATION, FL ASH MEMORY FWE CONTROLLED NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX FIG. 9 AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FOR FL ASH MEMORY Notes: 1. SA is the sector address for Sector Erase. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 10 WSF128K16-XXX FIG. 10 AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS FOR FL ASH MEMORY 11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX FIG. 11 WRITE/ERASE/PROGRAM OPERATION FOR FL ASH MEMORY, CS CONTROLLED NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 12 WSF128K16-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-L INE PACKAGE, HIP (H1) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX PACKAGE 519: 68 LEAD, CERAMIC QUAD FL AT PACK, CQFP (G1U) The WEDC 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 14 WSF128K16-XXX ORDERING INFORMATION W S F 128K16 - XXX X X X LEAD FINISH: Blank =Gold plated leads A = Solder dip leads DEVICE GRADE: M I C = Military Screened = Industrial = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H1 H G1U = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400) = 1.185" sq. Ceramic Hex In-line Package, HIP (Package 401) = 22.4 mm Ceramic Quad Flat Pack, CQFP (Package 519) ACCESS TIME (ns) 37 72 = 35ns SRAM and 70ns FLASH = 70ns SRAM and 120ns FLASH ORGANIZATION, 128K x 16 FLASH SRAM WHITE ELECTRONIC DESIGNS CORP. DEVICE TYPE 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module SRAM SPEED 70ns 70ns 35ns 35ns 70ns 35ns FLASH SPEED 120ns 120ns 70ns 70ns 120ns 70ns PACKAGE 66 pin HIP (H) 66 pin HIP (H1) 66 pin HIP (H) 66 pin HIP (H1) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) SMD NO. 5962-96900 01HXX 5962-96900 01HYX 5962-96900 02HXX 5962-96900 02HYX 5962-96900 01HX* 5962-96900 02HX* *SMD Pending 15 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com