WST2907S

WST2907S

  • 厂商:

    ETC

  • 封装:

  • 描述:

    WST2907S - PNP EPITAXIAL SILICON TRANSISTOR - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
WST2907S 数据手册
WST2907/S PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION ◇ Collector Current Ic=600mA ◇ Complementary to WST2222/S 3 SOT-23 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ◇Mark Information (Ta=25℃) 2 1 1. Emitter Symbol VCBO VCEO VEBO IC PC Tj Tstg Value -60 -40 -5 -600 TO-92 :650 SOT-23(S):350 Unit V V V mA mW ℃ ℃ TO-92 2. Base 3. Collector 150 -55~ +150 3 1 2 ◇Ordering Information Device Package TO-92 SOT-23 2B ELECTRICAL CHARACTERISTICS Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output Capacitance Transition Frequency Turn on Time Turn off Time Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) VBE(sat) Cob fT tON tOFF WST2907 WST2907S (Ta=25℃, unless otherwise specified) Test Condition IC=-10㎂ ,IE=0 IC=-10mA ,IB=0 IE=-10㎂ ,IC=0 VCB=-50V ,IE=0 VCE=-10V,IC=-10mA IC=-150㎃, IB=-15㎃ IC=-500㎃, IB=-50㎃ IC=-150㎃, IB=-15㎃ IC=-500㎃, IB=-50㎃ VCB=-10V,f=1MHZ VCE=-20V, IC=-50㎃ Vcc=-30V,Ic=-150mA, IB1=-15mA Vcc=-6V,Ic=-150mA, IB1=IB2=15mA Min -60 -40 -5 TYP MAX Unit V V V -20 75 -0.4 -1.6 -1.3 -2.6 8 250 45 100 ㎁ V V PF MHZ ns ns JAN.2003 REV:01 copyright@wooseok s.tech corp. All rights reserved. 1 WST2907/S Base Emitter Saturation Voltage Collector Emitter Saturation Voltage 1000 hFE ,DC Current Gain DC Current Gain VCE=-10V 300 100 50 VBE(sat) VCE(sat),Saturation Voltage,V -10 、 -3 -1 VBE(sat) IC=10IB -0.3 -0.1 -0.03 -1 -3 10 VCE(sat) 3 -10 -30 -100 -300 -1000 -1 -3 -10 -30 -100 IC,Collector Current,mA -300 -1000 IC,Collector Current,mA Current Gain-Bandwidth Product 1000 500 12 Output Capacitance IE=0 f=1MHz Current Gain Bandwidth Product,fT(MHZ) - VCE=-20V 10 Cob(PF),Capacitance 100 70 8 6 4 2 20 10 1 -1 -5 -10 -30 -100 -300 -1000 -1 -10 -30 -100 -300 1000 IC,Collector Current,mA Vcb,Collector-Base Voltage ,V JAN.2003 REV:01 copyright@wooseok s.tech corp. All rights reserved. 2
WST2907S
1. 物料型号:WST2907/S

2. 器件简介: - WST2907/S是一款PNP型外延硅晶体管,具有600mA的集电极电流(Ic),与WST2222/S互补。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 基极(Base) - 3. 集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):-60V - 集电极-发射极电压(VCEO):-40V - 发射极-基极电压(VEBO):-5V - 集电极电流(Ic):-600mA - 集电极功耗(Pc):TO-92封装650mW,SOT-23(S)封装350mW - 结温(Tj):150°C - 存储温度(Tstg):-55°C至+150°C

5. 功能详解: - 该晶体管的电气特性包括: - 集电极-基极击穿电压(BVCBO):-60V - 集电极-发射极击穿电压(BVCEO):-40V - 发射极-基极击穿电压(BVEBO):-5V - 集电极截止电流(ICBO):-20nA - DC电流增益(hFE):75 - 集电极-发射极饱和电压(VCE(sat)):-0.4V至-1.6V - 基极-发射极饱和电压(VBE(sat)):-1.3V至-2.6V - 输出电容(Cob):8PF - 转换频率(fT):250MHz - 导通时间(tON):45ns - 关闭时间(tOFF):100ns

6. 应用信息: - 该晶体管适用于通用目的的应用开关,与WST2222/S互补。

7. 封装信息: - 提供了TO-92和SOT-23两种封装类型。
WST2907S 价格&库存

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