07N70CP-A

SSM07N70CP,R-A N-channel Enhancement-mode Power MOSFET Dynamic dv/dt rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement G S D BVDSS R DS(ON) I D 675V 1.2Ω 7A DESCRIPTION The SSM07N70C series is specially designed as a main switching device for universal 90~265VAC off-line AC/DC converter applications. Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-220 (P) The TO-220 and TO-262 packages are widely preferred for all commercial and industrial applications. The device is well suited for switch-mode power supplies, AC-DC converters and high-current high-speed switching circuits. G D ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S TO-262 (R) Units V V A A A W W/°C mJ A mJ °C °C Rating 675 ± 30 7 4.4 18 89 0.7 2 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 140 7 7 -55 to 150 -55 to 150 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Unit °C/W °C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 6 SSM07N70CP,R-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 675 2 Typ. 0.6 4.5 32 8.6 9 17 15 35 18 2075 120 8 Max. Units 1.2 4 10 100 ±100 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=675V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=10Ω, VGS=10V RD=43Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse width