SSM07N70CP,R-A
N-channel Enhancement-mode Power MOSFET
Dynamic dv/dt rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement G S D
BVDSS R DS(ON) I
D
675V 1.2Ω 7A
DESCRIPTION
The SSM07N70C series is specially designed as a main switching device for universal 90~265VAC off-line AC/DC converter applications. Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D
S
TO-220 (P)
The TO-220 and TO-262 packages are widely preferred for all commercial and industrial applications. The device is well suited for switch-mode power supplies, AC-DC converters and high-current high-speed switching circuits.
G
D
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
S
TO-262 (R)
Units V V A A A W W/°C mJ A mJ °C °C
Rating 675 ± 30 7 4.4 18 89 0.7
2
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
140 7 7 -55 to 150 -55 to 150
THERMAL DATA
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Unit °C/W °C/W
3/21/2005 Rev.2.01
www.SiliconStandard.com
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SSM07N70CP,R-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 675 2 Typ. 0.6 4.5 32 8.6 9 17 15 35 18 2075 120 8 Max. Units 1.2 4 10 100 ±100 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=675V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=10Ω, VGS=10V RD=43Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse width
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