1014-12

1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes input prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55LT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 39 Watts 50 Volts 3.5 Volts 5.0 A - 65 to +150 oC +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1000-1400 MHz Vcc = 28 Volts Pin = 2.5 Watts As Above F = 1.4 GHz, Pin = 2.5 W MIN 12 2.5 6.8 40 30:1 TYP MAX UNITS Watt Watt dB % ηc VSWR1 BVces BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 5 mA Ie = 5 mA Vcb = 28 Volts 50 3.5 3.0 10 12.0 4.5 Volts Volts mA o Vce = 5 V, Ic = 200mA F =1 MHz, Vcb = 28 V pF C/W Issue June 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120