2MBI300UD-120
IGBT Module U-Series
Features
· High speed switching · Voltage drive · Low inductance module structure
1200V / 300A 2 in one-package
Equivalent Circuit Schematic
C1 E2
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
C2E1 G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions
Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
1 device
AC:1min.
Rating 1200 ±20 400 300 800 600 300 600 1470 +150 -40 to +125 2500 3.5 4.5
Unit V V A
W °C VAC N·m
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=300mA VGE=15V, IC=300A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=300A VGE=±15V RG=1.1 Ω VGE=0V IF=300A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 1.90 – 2.15 – 1.75 – 2.00 – 34 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.75 – 1.85 – 1.60 – 1.70 – – – 0.52 Unit Max. 2.0 400 8.5 2.25 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.05 – 1.90 – 0.35 – mA nA V V
Input capacitance Turn-on time
nF µs
Turn-off time Forward on voltage
V
Reverse recovery time Lead resistance, terminal-chip*3
IF=300A
µs mΩ
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.085 0.14 – °C/W °C/W °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
2MBI300UD-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
800 700 VGE=20V 600 Collector current : Ic [A] Collector current : Ic [A] 500 400 10V 300 200 100 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V 15V 12V 600 500 400 800 700 VGE=20V 15V
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip
12V
10V 300 200 100 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
800 700 600 Collector current : Ic [A] 500 400 300 200 100 0 0 1 2 3 4 T j=25°C T j=125°C 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip
Collector - Emitter voltage : VCE [ V ]
8
6
4
2
Ic=600A Ic=300A Ic=150A
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C
100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Cies Capacitance : Cies, Coes, Cres [ nF ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
10.0 Cres
VGE
1.0
Coes
VCE 0 300 600 900 1200 1500 1800
0.1 0 10 20 30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2MBI300UD-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125°C
1000 ton toff tr 100 tf
1000 toff ton tr 100
tf
10 0 100 200 300 400 500 600 Collector current : Ic [ A ]
10 0 100 200 300 400 500 600 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 60 50 40
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω
Eoff(125°C) Eon(125°C)
Eoff(25°C) 30 20 Err(125°C) 10 0 Err(25°C) Eon(25°C)
tr 100 tf
10 0.1 1.0 10.0 100.0
0
100
200
300
400
500
600
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 125°C
250 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 700 200 Collector current : Ic [ A ] 600 500 400 300 200 100 Err 0 0.1 1.0 10.0 100.0 Gate resistance : Rg [ Ω ] 0 0 800
Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.1Ω ,Tj
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