2SD552

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD552 DESCRIPTION ・With TO-3 package ・Complement to type 2SB552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 220 180 5 15 4 150 150 -55~200 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=10A; IB=1A IC=10A; IB=1A VCB=220V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=10V 4 25 160 MIN 180 TYP. 2SD552 MAX UNIT V 2.0 2.5 0.1 0.1 80 V V mA mA pF MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD552 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic