4N35X, 4N36X, 4N37X, 4N35, 4N36, 4N37,
OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l EN60950 approval pending DESCRIPTION The 4N35, 4N36, 4N37 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (100% min.) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
2.54 7.0 6.0 1.2 7.62 6.62
Dimensions in mm 1 2 3 6 5 4
7.62 4.0 3.0 0.5 13° Max 0.26
3.0 0.5 3.35
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 70V 6V 160mW 60mA 6V 105mW
7.62
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
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ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB90046M-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( Note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) Current Transfer Ratio (CTR) Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time Turn-off Time Output Rise Time Output Fall Time ton toff tr tf 5300 7500 5x1010 5 5 3.5 4.9 10 10 MIN TYP MAX UNITS 1.2 6 10 30 70 6 50 20 100 0.3 1.5 V V µA V V V nA nA % V VRMS VPK Ω
µs µs µs µs
TEST CONDITION IF = 10mA I R = 1 0 µA VR = 6 V IC = 1mA IC = 100µA IE = 100µA VCE = 10V VCE = 10V 10mA IF , 10V VCE 10mA IF , 0.5mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC= 2mA, RL = 100Ω
( FIG 1)
Output
Coupled
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
VCC Input RL = 100Ω Output Output 10% tr tf ton toff
10%
90%
90%
FIG 1
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DB90046M-AAS/A1
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW)
Collector Current vs. Collector-emitter Voltage 50 TA = 25°C 50 30 20 15 20 10 0 10 IF = 5mA
150
Collector current I C (mA) -30 0 25 50 75 100 125
40 30
100
50
0 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 80 70 Forward current I F (mA) 60 50 40 30 20 10 -30 0 25 50 75 100 125
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Forward Current 1.4 Relative current transfer ratio IF = 10mA IC = 0.5mA
Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio
IF = 10mA VCE = 10V
Collector-emitter saturation voltage V
CE(SAT)
(V) 1.2 1.0 0.8 0.6 0.4 0.2 0 1
1.0
0.5
VCE = 10V TA = 25°C
0 -30 0 25 50 75 100 Ambient temperature TA ( °C )
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2
5
10
20
50
Forward current IF (mA)
DB90046M-AAS/A1
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