4N600S

Bay Bay Linear Inspire Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features • • • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Ordering Information Device 4N600T 4N600S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID (TC=25°C) ID (TC=100°C) VGSV PD TJ TSTG Parameter Drain Current -Continues -Pulsed Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 4.0 2.5 16 ±20 75 0.59 -55 to 150 Unit A V W W/°C °C Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com 4N600(3600) Electrical Characteristics ( TC = Symbol IDSS V VGS(TH) RDS(ON) IGSS 25°C unless otherwise specified) Parameter Zero Gate Voltage Drain Current Drain-to-Source Breakdown Gate Threshold Voltage Static Drain Voltage Conditions VDS=600V VGS=0V ID=100µA, VGS=0 VDS=VGS ID=250µA VGS=10V, ID=2.4A Min 600 2 - Typ - Max 100 4 Units µA V V Ω NA S pF pF pF NS - 1.9 100 -100 Gate-to-Source Forward Leakage VGS=20V Gate-to-Source Reverse Leakage VGS=-20V Forward Tranconductance VDS=100V, ID =2.4A gfs Input Capacitance CISS VDS= 25V, VGS=0V Output Capacitance COSS F=1.0 MHZ Reverse Tras. Capacitance CRSS Turn-ON Delay Time tD(ON) VDD=300V Turn-ON Rise Time tr ID=2.4A, RGEN=12Ω Turn-OFF Delay Time td(off) RD=74Ω Turn-OFF Fall Time tF Maxim Continuous Drain source Diode Forward Current IS Drain Source Diode VGS=0V VDS (note) Forward Voltage IS=4A THERMAI CHRACTERISTICS Thermal Resistance, Junction to Case RJC Thermal Resistance, Junction to Ambient RJC Note: Pulse Test: Pulse With≤ 300 µS, Duty Cycle ≤ 2.0% 2.9 800 110 20 12 18 53 19 4.0 1.50 5 100 A V °C/W °C/W Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations, computer simulations and/ or initial prototype evaluation. Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges. The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application. LIFE SUPPORT AND NUCLEAR POLICY Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of Bay Linear President. Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com