5.0mm
INFRARED
EMITTING
DIODE
REV:A / 0
520E940C
PACKAGE DIMENSIONS
Note: 1.All Dimensions are in millimeters. 2.Tolerance is ±0.25mm(0.010 ") Unless otherwise specified. 3.Protruded resin under flange is 1.5mm(0.059 ") max. 4.Lead spacing is measured where the leads emerge from the package. 5.Specification are subject to change without notice
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page : 1
QR0202-10B
5.0mm
INFRARED 520E940C
EMITTING
DIODE
REV:A / 0
FEATURES * EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY * LOW FORWARD VOLTAGE * SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY *HIGH RELIABILITY CHIP MATERIALS * Dice Material : GaA1As/GaAs * Lens Color : WATER CLEAR ABSOLUTE MAXIMUM RATING : ( Ta = 25°C ) SYMBOL
PD VR IF Topr Tstg Power Dissipation Reverse Voltage Average Forward Current Operating Temperature Range Storage Temperature Range
PARAMETER
INFRARED
100 5 100
UNIT
mW V mA
-35°C to 85°C -35°C to 85°C
Lead Soldering Temperature{1.6mm(0.063 inch) From Body}250°C ± 5°C for 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
TEST CONDITION IF = 10mA IF = 50mA VR = 5V IF = 10mA IF = 10mA IF = 10mA 940 22 30
SYMBOL VF IR λP 2θ1/2 IE
PARAMETER Forward Voltage Reverse Current Peak Emission Wavelength Half Intensity Angle Radiant Intensity
MIN. TYP. MAX. UNIT 1.2 1.4 1.6 10 V µA nm deg mw/sr
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page : 2
QR0202-10C
5.0mm
INFRARED 520E940C
EMITTING
DIODE
REV:A / 0
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page : 3
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