5STP03X5800

VDSM ITAVM ITRMS ITSM VT0 rT • • • • • = = = = = = 6500 V 350 A 550 A 4500 A 1.20 V 2.300 mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA1003-04 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Part Number VDSM VDRM VRSM1 IDSM IRSM dV/dtcrit VRSM VRRM 5STP 03X6500 5STP 03X6200 5STP 03X5800 Conditions 6500 V 5600 V 7000 V 6200 V 5300 V 6700 V ≤ 150 mA ≤ 150 mA 1000 V/µs 5800 V 4900 V 6300 V f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDSM VRSM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.4 kg 38 mm 21 mm 10 kN 8 kN 12 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 03X6500 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 350 A 550 A 4500 A 4850 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1000 A 300 - 900 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 101 kA s tp = 98 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 3.50 V 1.20 V 2.300 mΩ 30-80 mA 15-60 mA IT = IT = Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 80-500 mA 50-200 mA Switching di/dtcrit Critical rate of rise of on-state current 100 A/µs 200 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 1000 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 700 µs VD ≤ 0.67⋅VDRM ITRM = 1000 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = 1 A/µs Recovery charge 900 µAs 2000 µAs Triggering VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25° Tj = 25° VD =0.4 x VDRM VD = 0.4 x VDRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Sep. 01 page 2 of 5 5STP 03X6500 Thermal Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 °C -40…140 °C 85 K/kW 95 K/kW 45 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled 15 K/kW 7.5 K/kW ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 26.07 0.6439 2 12.16 0.0812 3 3.37 0.0161 4 3.1 0.0075 Fig. 1 Transient thermal impedance junction to case. n Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Sep. 01 page 3 of 5 5STP 03X6500 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Sep. 01 page 4 of 5 5STP 03X6500 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1003-04 Sep. 01