A1020

A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to C2328 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-0.1mA IC=-10mA IE=-0.1mA VCE=-2V, IC=-0.5A IC=-1A, IB=-50mA -40 -30 -5.0 80 400 -0.5 V Min Max -0.1 -0.1 Unit uA uA V V V May.2004 Version :0.0 Page 1 of 1