AD500-9

AD500-9 TO52S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency > 80 % at λ 760 - 910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2 µA) Temperature Coefficient of UBR Spectral Responsivity 1) (at 905 nm, M = 100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain “Excess Noise” factor (M = 100) “Excess Noise” index (M = 100) Noise Current (M = 100) N.E.P. (M = 100, 905 nm) Operating Temperature Storage Temperature A D500-9 TO52S1 0.196 mm2 Ø 500 µm max. 5 nA typ. 0.5 - 1 nA typ. 1.2 pF 120 … 300 V typ. > 200 V typ. 1.55 V/K min. 55 A/W typ. 60 A/W typ. 0.5 GHz typ. 550 ps 50 - 60 > 200 Package (TO52S1): CASE 4 3 1 45° ANODE ∅ 2.54 ∅ 5.4 ± 0.2 CATHODE ∅ 4.7 ± 0.1 0.9 ± 0.3 ∅ 2.0 min. 3.6 ± 0.2 sensitive surface typ. 2.5 typ. 0.2 typ. 1 pA/Hz1/2 typ. 2* 10 W/Hz -20 ... +70 °C -60 ... +100 °C -14 1/2 2.7 ± 0.2 0.5 max. 0.4 max. ∅ 0.45 Chip: AD500-9 diam. active area: 100 µm 1) measurement conditions: Setup of photo current 10 nA at M = 1 and irradiation by an IRED (880 nm, 80 nm bandwith). Increase the photo current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage. 3 1 view without window cap 4 w ww.silico n - sensor.co m Version: 05-04-29 Specification before: SSO-AD-500-9-TO52-S1 w ww.pacifi c - sensor.co m 13 ± 1.0 0.35 ± 0.2 ∅ 3.0 ± 0.1 S pectral Responsivity at M = 1 s eries - 9 0,700 0,600 Sabs (A/W) S pectral Responsivity at M = 100 s eries - 9 7 0 ,0 0 6 0 ,0 0 5 0 ,0 0 4 0 ,0 0 3 0 ,0 0 2 0 ,0 0 1 0 ,0 0 0 ,0 0 0,500 Sabs (A/W) 0,400 0,300 0,200 0,100 0,000 4 00 5 00 60 0 70 0 80 0 9 00 1 00 0 1 10 0 W av elength (nm) 400 500 600 700 800 900 1000 1100 W a v e le ng th (nm ) QE for M = 1 s eries - 9 100,0 90,0 80,0 70,0 60,0 QE 50,0 40,0 30,0 20,0 10,0 0 ,0 400 500 600 700 800 900 1000 1100 ID = f(UR/UBR) A D500-9 10,000 W a v e le ngth (nm) Gain = f(VR) A D500-9 1000,0 1,000 100,0 Id [nA] 0,100 M 10,0 0,010 0 ,001 0,000 1,0 0,200 0,400 UR /UBR 0,600 0,800 1,000 0 50 100 150 VR [ V] 200 250 300 Maximum Ratings: max. electrical power dissipation max. optical peak value, once max. continous optical operation ( Pelectr. = Popt. * Sabs * M * UR ) 100 mW at 22°C 200 mW for 1 s IPh (DC) ≤ 250 µA ≤ 1 mA for signal 50 µs "on" / 1 ms "off" Bias supply voltage Current limiting resistor Application Hints: Current should be limited by a protecting resistor or current limiting - IC inside the power supply. Use of low noise read-out - IC. For high gain applications bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used. APD min. 0,1 µF, closest to APD Diode, protective circuit Handling Precautions: Read-out circuit or f.e. 50Ω Load resistance Soldering temperature 260 °C for max. 10 s. The device must be protected against solder flux vapour! min. Pin - length 2 mm ESD - protection Standard precautionary measures are sufficient. Storage Store devices in conductive foam. Avoid skin contact with window! Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window. Germany : Silicon Sensor GmbH Ostendstr. 1 12459 Berlin Germany Phone: +49 (0)30-63 99 23 10 Fax: +49 (0)30-63 99 23 33 E-Mail: sales@silicon-sensor.de International Sales: Silicon Sensor GmbH U.K. Office 35 Orchard Close Stanstead Abbotts, Ware Hertfordshire SG 12 8 AH Phone/Fax: +44 (0)1920/87 20 90 E-Mail: pnsilsensuk@btconnect.com p.nash@silicon-sensor.com U.S.A. : Pacific Silicon Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: : sales@pacific-sensor.com