AO4609L

July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = 4.5V) < 260mΩ (VGS = 2.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±12 -3 -2.4 -6 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 8.5 6.6 40 2 1.28 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 56 81 40 Max 62.5 110 40 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 48 °C/W AO4609 N-Channel Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8.5A TJ=125°C 1 30 15.5 22.3 23 23 0.75 18 27 28 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 4.2 5.2 4.4 17.3 3.3 16.7 6.7 1.8 Min 30 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4609 P-Channel Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-3A -0.6 -10 102 154 128 3 187 4.5 -0.85 130 200 180 260 -1 -2 -1 Min -30 -1 -5 ±100 -1.4 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 409 55 42 12 4.4 0.8 1.32 5.3 4.4 31.5 8 15.8 8 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-15V, ID=-3A VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 28 Normalized On-Resistance 26 24 RDS(ON) (mΩ ) 22 20 18 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 RDS(ON) (mΩ ) ID=8.5A IS (A) 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.6 VGS=10V 1.4 ID=8.5A VGS=4.5V 1.2 4V 10V 4.5V 3.5V 1.20E+01 ID(A) 125°C 8.00E+00 VGS=3V 4.00E+00 0.00E+00 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25°C 2.00E+01 1.60E+01 VDS=5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 125°C 10 Alpha & Omega Semiconductor, Ltd. AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss 100.0 RDS(ON) limited 1ms 10ms 0.1s 100µs 10µs Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150°C TA=25°C ID (Amps) 10.0 1.0 TJ(Max)=150°C TA=25°C 0.1 0.1 1 1s 10s DC 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -5V -10V 15 -ID (A) -4.5V -4V VGS=-3.5V 10 -3V -2.5V 2 -2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (mΩ ) 1.6 VGS=-10V 1.4 VGS=-4.5V VGS=-2.5V 1.2 ID=-2A 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 6 4 125°C 8 10 VDS=-5V 25°C 5 150 VGS=-4.5V 100 VGS=-10V 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-2A RDS(ON) (mΩ ) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C 125°C Alpha & Omega Semiconductor, Ltd. AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=-15V ID=-3A Capacitance (pF) 500 400 300 200 Coss 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) -ID (Amps) 10.0 10µs 100µs 1ms 10ms 0.1s 20 TJ(Max)=150°C TA=25°C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS DIMENSIONS IN INCHES A A1 A2 b c D E1 e E h L aaa θ θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8° MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ± 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN LOGO 4 6 0 9 FAYWLC NOTE: LOGO 4609 F A Y W LC - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO4609 CODE 4609 Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Tape and Reel Data SO-8 Reel SO-8 Tape Leader / Trailer & Orientation Document No. PD-00064 ALPHA & OMEGA SEMICONDUCTOR, LTD. Version Title rev C AO4609 Marking Description SO-8 PACKAGE MARKING DESCRIPTION Standard product Green product NOTE: LOGO 4609 F&A Y W LT - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION AO4609 AO4609L Standard product Green product CODE 4609 4609 8 SEATING PLANE GAUGE PLANE NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 1 θ SYMBOLS DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES RECOMMENDED LAND PATTERN A A1 A2 b c D E1 e E h L θ MIN 1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40 0° NOM 1.65 −−− 1.50 −−− −−− 4.90 3.90 1.27 BSC 6.00 −−− −−− −−− MAX 1.75 0.25 1.65 0.51 0.25 5.00 4.00 6.20 0.50 1.27 8° MIN 0.053 0.004 0.049 0.012 0.007 0.189 0.150 0.228 0.010 0.016 0° NOM 0.065 −−− 0.059 −−− −−− 0.193 0.154 0.050 BSC 0.236 −−− −−− −−− MAX 0.069 0.010 0.065 0.020 0.010 0.197 0.157 0.244 0.020 0.050 8° UNIT: mm ALPHA & OMEGA SEMICONDUCTOR, LTD. SO-8 Carrier Tape SO-8 Tape and Reel Data SO-8 Reel SO-8 Tape Leader / Trailer & Orientation