AO4916L

Rev 3: Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 G1 S1 A G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET 30 ±20 8.5 6.6 40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A C B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.28 -55 to 150 Typ 48 74 35 47.5 71 32 30 3 2 40 2 1.28 -55 to 150 Max 62.5 110 40 62.5 110 40 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd. AO4916, AO4916L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 40 14 20 21 23 0.76 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.35 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 4.2 5.2 VGS=10V, VDS=15V, RL=1.8Ω , RGEN=3Ω IF=8.5A, dI/dt=100A/µs 4.4 17.3 3.3 16.7 9.3 0.45 0.007 3.2 12 37 7.5 6.5 25 5 21 11 0.5 0.05 10 20 pF mA 0.85 24 12 1250 17 25 27 1.8 Min 30 0.005 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A Irm CT Maximum reverse leakage current Junction Capacitance VR=30V VR=30V, TJ=125°C VR=30V, TJ=150°C VR=15V 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4916, AO4916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 26 VGS=4.5V Normalized On-Resistance 24 22 RDS(ON) (mΩ ) 20 18 16 14 12 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 RDS(ON) (mΩ ) ID=8.5A IS (A) 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 20 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V 1.6 VGS=10V 1.4 ID=8.5A VGS=4.5V 1.2 4V 10V 4.5V 3.5V 12 ID(A) 125°C 8 VGS=3V 4 20 16 VDS=5V 13.4 22 0 1.5 2 2.5 25°C 16 26 0.76 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 125°C Alpha & Omega Semiconductor, Ltd. AO4916, AO4916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 Coss 13.4 22 15 0.76 20 16 26 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 1ms 10ms 0.1s 100µs 10µs Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150°C TA=25°C ID (Amps) 10.0 1.0 1s TJ(Max)=150°C TA=25°C 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. Document No. PD-00071 ALPHA & OMEGA SEMICONDUCTOR, LTD. Version Title rev C AO4916 Marking Description SO-8 PACKAGE MARKING DESCRIPTION Standard product Green product NOTE: LOGO 4916 F&A Y W LT - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION AO4916 AO4916L Standard product Green product CODE 4916 4916 ALPHA & OMEGA SEMICONDUCTOR, LTD. SO-8 Carrier Tape SO-8 Tape and Reel Data SO-8 Reel SO-8 Tape Leader / Trailer & Orientation