AO7403

Rev 2: Aug 2004 AO7403, AO7403L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. AO7403L (Green Poduct) is offered in a lead-free package. Features VDS (V) = -20V ID = -0.7A RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) SC-70 (SOT-323) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150 Units V V A W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO7403, AO7403L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.7A TJ=125°C VGS=-2.5V, ID=-0.6A VGS=-1.8V, ID=-0.5A VDS=-5V, ID=-0.7A -0.5 -3 388 542 519 666 1.7 -0.86 470 660 625 900 -1 -0.4 -0.6 Min -20 -1 -5 ±10 -0.9 Typ Max Units V µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 114 17 14 12 1.44 0.14 0.35 6.5 6.5 18.2 5.5 10 3 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-0.7A VGS=-4.5V, VDS=-10V, RL=14.3Ω, RGEN=3Ω IF=-0.7A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-0.7A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO7403, AO7403L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 -8V -6V -4.5V -4V 4 -ID (A) -3V 2 -2.5V VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 1000 Normalized On-Resistance 900 800 RDS(ON) (mΩ ) 700 600 500 400 300 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 -IS (A) 600 500 25°C 400 300 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics ID=-0.7A 1.0E+00 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 1.0E-04 RDS(ON) (mΩ ) VGS=-4.5V VGS=-2.5V VGS=-1.8V 1.6 1 -3.5V -ID(A) 2 3 125°C 4 25°C VDS=-5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V ID=-0.5A 1.4 VGS=-2.5V ID=-0.6A 1.2 VGS=-4.5V ID=-0.7A 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 125°C Alpha & Omega Semiconductor, Ltd. AO7403, AO7403L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 VDS=-10V ID=-0.7A Capacitance (pF) 150 Ciss 100 Coss 50 Crss 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 TJ(Max)=150°C TA=25°C 10.00 Power (W) -ID (Amps) RDS(ON) limited 1.00 0.1 1s 10s 0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100µs 1ms 10ms 10µs 14 12 10 8 6 4 2 0 0.001 TJ(Max)=150°C TA=25°C 0.10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. Document No. Version Title PD-00128 rev C AO7403 Marking Description SC-70(3L) PACKAGE MARKING DESCRIPTION LT PNW PNW Standard product Green product NOTE: P - Product number code N - Assembly&Foundry location code W - Year and Week code LT - Assembly lot code. PART NO. DESCRIPTION CODE (P&N) 3&N Standard product AO7403 3&N AO7403L Green product LT Rev. A θ NOTE 1.ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS 4.DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM .ie:REVERSE TRIM/FORM. 5. DIMENSION L IS MEASURED IN GAUGE PLANE 6. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. SYMBOLS DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN A A1 A2 b c D E e e1 E1 L θ 0.00 0.7 0.15 0.08 1.85 1.80 1.1 0.26 0° RECOMMENDATION OF LAND PATTERN NOM −−− −−− 0.9 −−− −−− 2.10 2.30 0.65 BSC 1.30 BSC 1.30 0.36 4° MAX 1.10 0.10 1.00 0.30 0.22 2.15 2.40 MIN 0.00 0.028 0.006 0.003 0.073 0.071 1.4 0.46 8° 0.043 0.010 0° NOM −−− −−− 0.035 −−− −−− 0.083 0.091 0.026 BSC 0.051 BSC 0.051 0.014 4° MAX 0.043 0.004 0.039 0.012 0.009 0.085 0.094 0.055 0.018 8° UNIT: mm SC-70 3L Tape and Reel Data SC-70 3L Carrier Tape SC-70 3L Reel SC-70 3L Tape Leader / Trailer & Orientation