BF622-T1

BF622-T1

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    BF622-T1 - The Small-signal NPN Silicon High Voltage Medium-Power Transistor - List of Unclassifed M...

  • 详情介绍
  • 数据手册
  • 价格&库存
BF622-T1 数据手册
PLANETA The Small-signal NPN Silicon High Voltage Medium-Power Transistor DESCRIPTION The BF622 is an NPN silicon epitaxial transistor designed for application as a video output to drive color CRT, telephony, professional communication equipment and other high voltage applications. It has dynamic range and good current characteristic. This high voltage transistor in 3-Pin mini power plastic package SOT89 offers superior quality and performance at low cost. 1 BF622 2 2 3 1 – Base 2 – Collector 3 – Emitter FEATURES Ø Ø Ø Ø Low Saturation Voltages VCE(sat)= 0.6 V VBE(sat)= 0.9 V High Breakdown Voltages V(BR)CBO= 250 V V(BR)CEO= 250 V Low Collector Current IC= 50 mA Complementary to BF623 SOT89 JEDEC EIAJ GOST Weight: TO-243 SC-62 KT-47 0.055g ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Operating Junction Temperature Range Storage Temperature Range Symbol VCEO VCBO VEBO IC ICM PC TJMAX TOPR TSTG Value 250 250 5 50 100 1.0 150 -60 to +100 -65 to +150 Unit V V V mA mA W °C °C °C ORDERING INFORMATION Device BF622 BF622-T1 Marking DA DA Package SOT-89 SOT-89 Quantity 5 Kpcs / plastic bags 1 Kpcs / Reel In bulk Embossed tape 12-mm wide 7'' dia. Pin 2 (Collector) towards the windung. Perforation on the right. Packing Style PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © August 2001 Rev 1 Ph./Fax: +7–816–2231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta BF622 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic DC CHARACTERISTICS Collector – Base Cutoff Current, IE= 0mA, VCB=200V Emitter – Base Cutoff Current, IC= 0mA, VEB= 5V Collector – Base Breakdown Voltage, IC= 10µA, IE= 0mA Collector – Emitter Breakdown Voltage, IC= 1mA, IB= 0mA Emitter – Base Breakdown Voltage, IE=100µA, IC= 0mA DC Current Gain, IC= 25mA, VCE= 20V AC CHARACTERISTICS Collector – Emitter Saturation Voltage, IC= 30mA, IB= 5mA Base – Emitter Saturation Voltage, IC= 20mA, IB= 2mA Collector – Base Capacitance, IE= 0mA, VCB= 30V, f=1MHz Current Gain – Bandwidth Product, IC= 10mA, VCE= 10V VCE(sat) – VBE(sat) – COB – fT 60 – – – 1.6 MHz – 0.9 pF – 0.6 V V ICBO – IEBO – V(BR)CBO 250 V(BR)CEO 250 V(BR)CEO 5 hFE 50 – – – – – – – V – – V – 50 V – 10 nA nA Symbol Min Typ Max Unit PACKAGE DIMENSIONS of BF622 in mm 4.5±0,1 1.9max B 1.5±0.1 0.8min 2.5±0.1 4±0.25 1 2 0.5±0.05 1.5 3.0 3 0.4 0.4±0.05 B PLASTIC CASE KT-47 Ph./Fax: +7–816–2231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © August 2001 Rev 1 2
BF622-T1
1. 物料型号: - 型号:BF622 - 封装:SOT89、TO-243、EIAJ GOST SC-62 KT-47

2. 器件简介: - BF622是一款NPN硅外延晶体管,设计用于视频输出,驱动彩色CRT、电话、专业通信设备等高压应用。

3. 引脚分配: - 1 – 基极(Base) - 2 – 集电极(Collector) - 3 – 发射极(Emitter)

4. 参数特性: - 低饱和电压:$V_{CE(sat)}=0.6 V$,$V_{BE(s)}=0.9 V$ - 高击穿电压:$V_{(BR)C80}=250 V$,$V_{(BR)CEO}=250 V$ - 低集电极电流:$I_{C}=50 mA$ - 与BF623互补

5. 功能详解: - 该晶体管具有动态范围和良好的电流特性,提供优越的质量和性能,同时成本较低。

6. 应用信息: - 用于视频输出,驱动彩色CRT、电话、专业通信设备等高压应用。

7. 封装信息: - 封装类型:SOT89、TO-243、EIAJ GOST SC-62 KT-47 - 重量:0.055g
BF622-T1 价格&库存

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