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BRF61002

BRF61002

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    BRF61002 - NPN LOW NOISE SILICON MICROWAVE TRANSISTOR - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
BRF61002 数据手册
BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applications. From 10 mA to greater than 20mA, ft is nominally 10 GHz. Maximum recommended continuous current is 20 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 9 7 1.5 20 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz GHz 12 18.1 12.8 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO C CB Power output at 1dB compression: Gain at 1dB compression: Noise Figure: VCE =8V, I C = 2mA Forward Current Transfer Ratio: VCE = 8V, IC = 10 mA Collector Cutoff Current 0.2 Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V : VCB =8V f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Z S = 50 Ω f = 1MHz dBm dBm dB 50 12 15 1.6 100 250 µA µA f = 1MHz pF 0.11 1.0 PAGE 2 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61004 Package Style 04: 0.145" Plastic Macro-X BRF61086 Package Style 86: 0.085" Plastic Micro-X, Surface Mount 0.02 .51 1 2 0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051 4 3 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 BRF61085 PackageStyle 85: 0.085" Plastic Micro-X BRF61087 Package Style 87: 0.085" Plastic Micro-X, Short Lead .020 .51 4 1 3 2 .60+0.10 1.52+.26 .065 2.15 5 .008+.002 .20+.050 .020 .51 .215+.010 5.46+.25 PAGE 3 BIPOLARICS, INC. BRF61002J PackageStyle 02J: SOT-23J Part Number BRF610 BRF61002 PackageStyle 02: SOT-23 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 0.30 0.51 1.39 1.57 0.45 0.60 1.90 2.25 2.75 0.95 2.65 3.04 0.79 1.1 0.00 0.10 0.10 0.45 0.60 BRF61014 BRF61092 Package Style 14: SOT-143 Package Style 92: TO-92 PAGE 4 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61035 Package Style 35: Micro-X 0.085" Ceramic LEAD Package Style 14, 85, 35 & 10 1 Base 2 Emitter 3 Collector 4 Emitter NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510)226-6565 FAX: (510) 226-6765
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