C945LT1

SOT-23 Plastic-Encapsulate Transistors SOT— 23 C945LT1 FEATURES TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（ Tamb=25℃ otherwise specified） Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VBEF １．０ ２．４ １．３ ０．９５ ２．９ １．９ ０．９５ unless Test conditions IE=0 MIN 60 50 5 0.1 0.1 0.1 130 40 0.3 1 1.4 V V V 400 TYP MAX UNIT V V V Ic= 1ｍA， Ic= 0.1mA， IB=0 Ic= 100μA， IB=0 VCB=60 V , IE=0 VCB=45 V , IE=0 VEB= 5V , IC=0 ０．４ Unit : mm μA μA μA VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA IC=100 mA, IB= 10m A IC=100 mA, IB= 10m A IE= 310m A VCE=6V, I = 10mA C Transition frequency fT f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Ｒ ａｎｋ　 Ｒａｎｇｅ　　 ＭＡＲＫＩＮＧ　 Ｌ　 １３０－２００　 ＣＲ　 Ｈ　 ２００－４００　 SOT-23 PACKAGE OUTLINE DIMENSIONS D b θ 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 θ 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100