CLE310F

CLE310F Super-efficient AlGaAs IRED Flat Lead PLCC Package ® Clairex June, 2003  Technologies, Inc. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • Flat lead PLCC package • ± 5° emission angle • 850nm peak wavelength • Exceptionally high power output • Custom plastic lens description The CLE310F is an 850nm, high efficiency, AlGaAs infrared emitting diode. Output typically exceeds standard AlGaAs emitters by 50%. The CLE310F is intended for applications requiring high power output and narrow radiation pattern. Contact Clairex for alternative wavelength emitter chips, different lenses and lead configurations. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ...................................................................... -40°C to +125°C operating temperature ................................................................... -40°C to +125°C lead soldering temperature(1) ..........................................................................240°C maximum continuous current(2) ....................................................................... 50mA peak forward current (10µs pulse width, 100pps) ................................................ 1A maximum power dissipation(3) ....................................................................... 80mW reverse voltage .................................................................................................... 3V notes: 1. 0.06” (1.5mm) from case for 5 seconds maximum. Maximum temperature can be 260°C if reflow soldering. 2. Derate linearly 0.40mA/°C from 25°C free air temperature to TA = +125°C. 3. Derate linearly 0.64mW/°C from 25°C free air temperature to TA = +125°C. 4. Other wavelength die are available in this package. electrical characteristics (TA = 25°C unless otherwise noted) symbol PO VF IR λp BW θHP tr tf parameter Total power output(5) Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power points Emission angle at half power points Radiation rise time(6) Radiation fall time (6) min 1.5 - typ 1.4 850 50 10 20 40 max 1.6 10 - units mW V µA nm nm deg. ns ns test conditions IF = 20mA IF = 20mA VR = 3.0V IF = 20mA IF = 20mA IF = 20mA IF(PK) = 20mA IF(PK) = 20mA Note: 5. Power output is measured in an integrating sphere. 6. f = 100kHz, D.C. = 50%. Pulse generator tr and tf