CMM1331-KU

CMM1331-KU

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    CMM1331-KU - 12.70 to 13.50 GHz 1.5 Watt Power Amplifier - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
CMM1331-KU 数据手册
CMM1331-KU Advanced Product Specifications October 2003 (1 of 2) 12.70 to 13.50 GHz 1.5 Watt Power Amplifier Pin Functional Diagram RF IN 3 GROUND 4 Vgg 5 CMM1331-KU Features ❏ 32.5 dBm (Typ.) Saturated Output Power ❏ 32.0 dB (Typ.) Linear Gain ❏ Fully Matched ❏ Unconditionally Stable ❏ Copper/Molybdenum Flange Package for Optimum Thermal Dissipation Applications ❏ Ku-Band VSAT Transmit Subsystems Vdd 1 GROUND 2 10 Vdd 9 GROUND 8 RF OUT 7 GROUND 6 Vgg Description The CMM1331-KU is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1331-KU provides 32.0 dB linear gain and delivers 1.5 watts of output power at saturation operating from 12.70 to 13.50 GHz frequency. The unconditional stability and internal matching provides for reduction of external components making this product a simple and low-cost solution. The package is designed with a base material of gold-plated copper/molybdenum composite that offers excellent thermal properties and minimum mechanical stress. Electrical Characteristics (T = +25°C, Vd = 7V, Idq = 770mA) Parameter Condition Min Typ Max Units Frequency Range Saturated Output Power Saturated Output Power Variation Linear Gain Linear Gain Variation Input Reflection Coefficient Output Reflection Coefficient Gate Supply Voltage Drain Current Power Added Efficiency Thermal Resistance Pin = 3.0 dBm Over operating frequency Over operating frequency 12.70 32.0 29.0 13.50 32.5 0.3 32.0 2.5 -10.0 -7.0 -0.9 940 27.0 0.6 35.0 4.5 Idq = 770 mA At Saturation Channel to Backside -1.1 23.0 -0.7 1000 GHz dBm dBm dB dB dB dB Volts mA % °C/W Electrical Characteristics (T = -40°C to +70°C, Vd = 7V, Idq = 770mA) Parameter Condition Min Typ Max Units Saturated Power Output Linear Gain Variation Stability Variation from room temperature value Variation from room temperature value -0.5 -2.5 3.5 Unconditionally Stable dBm dB — Maximum Ratings (TA = -40°C to +70°C) Operation outside any of these limits can cause permanent damage. Parameter Rating Units Parameter Rating Units Drain Voltage (+Vdd) Gate Voltage (Vgg) Bias Current (Idq) Gate Current (Ig) 3236 Scott Boulevard 8.5 -3.0 1000 5 Volts Volts mA mA RF Input Power (Pin) Storage Temperature Channel Temperature Dissipated Power (Pdis) Phone: (408) 986-5060 7.0 -50 to +150 175 7.3 dBm °C °C Watts Santa Clara, California 95054 Fax: (408) 986-5095 CMM1331-KU Application Notes Vdd (+) 1 2 RF IN 3 4 5 Vgg (-) 0.1µF 0.1µF Advanced Product Specifications - October 2003 (2 of 2) Physical Dimensions Vdd (+) CMM1331-KU 10 9 8 7 6 Vgg (-) 0.1µF 0.1µF RF OUT Biasing Notes 1. Dual bias is required 2. 0.1µF bypass capacitors are needed on PC board as close as possible to pins 1, 5, 6 and 10. 3. Positive (+) bias can be applied either at pin 1 or pin 6. 4. Negative (-) bias can be applied either at pin 5 or pin 6. 5. No DC block is required at RF IN/OUT. 6. Negative (-) bias must be applied before applying positive (+) bias. Mounting Recommendations 1. Leads should be as short as possible. 2. Solder all leads on PC board. Solder area should be as small as possible. Grounds should be provided for pins 2, 4, 7, and 9 on PC boards. 3. Flange should be screwed down on adequate heat sink. Do not over torque screws in order to avoid breaks in ceramic and die (tightening torque: 6lbf-in). 4. Grounding shims should be placed between the flange and heat sink to ensure optimal ground contact. Aluminum or Copper foil can be used. 5. 50Ω RF IN/OUT interface are required for optimal electrical performance. 6. Due to the high gain of this device it is highly recommended to maintain the reverse isolation (S12) above 50 dB. Ordering Information The CMM1331-KU is available in plastic trays. Part Number for Ordering CMM1331-KU Package Leaded flange package in plastic trays Celeritek reserves the right to make changes without further notice to any products herein. Celeritek makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Celeritek assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Celeritek does not convey any license under its patent rights nor the rights of others. Celeritek products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Celeritek product could create a situation where personal injury or death may occur. Should Buyer purchase or use Celeritek products for any such unintended or unauthorized application, Buyer shall indemnify and hold Celeritek and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Celeritek was negligent regarding the design or manufacture of the part. Celeritek is a registered trademark of Celeritek, Inc. Celeritek, Inc. is an Equal Opportunity/Affirmative Action Employer. 3236 Scott Boulevard, Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
CMM1331-KU
### 物料型号 - 型号: CMM1331-KU

### 器件简介 - CMM1331-KU是一款四阶段pHEMT GaAs MMIC功率放大器,非常适合用于设计Ku波段VSAT应用的发射子系统。该放大器在12.70至13.50 GHz的频率下提供32.0 dB的线性增益,并在饱和时提供1.5瓦的输出功率。

### 引脚分配 - 引脚1、6: 正(+)偏置可以应用于引脚1或引脚6。 - 引脚5、6: 负(-)偏置可以应用于引脚5或引脚6。 - 引脚2、4、7、9: 应在PCB上为这些引脚提供接地。

### 参数特性 - 频率范围: 12.70至13.50 GHz - 饱和输出功率: 32.0至32.5 dBm(典型值) - 线性增益: 29.0至32.0至35.0 dB - 输入反射系数: -10.0 dB - 输出反射系数: -7.0 dB - 栅极供电电压: -1.1至-0.9至-0.7伏特 - 漏极电流: 在饱和时为940至1000 mA - 功率增益效率: 23.0至27.0%

### 功能详解 - CMM1331-KU的无条件下稳定性和内部匹配减少了外部组件的需求,使得产品成为一个简单且低成本的解决方案。该封装设计采用镀金铜/钼复合材料作为基材,提供出色的热性能和最小的机械应力。

### 应用信息 - 应用: Ku波段VSAT发射子系统

### 封装信息 - 封装: 有引脚的法兰封装,塑料托盘包装。
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